SCHEMBL888678

SCHEMBL888678

CCCCN[SiH2]NCCCC

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TSHR P16473 4/20 0.45
ALDH1A1 P00352 1/20 0.40
CA1 P00915 2/20 0.39
CA2 P00918 2/20 0.39
ADH1B P00325 2/20 0.39
ADH1C P00326 2/20 0.39
ADH1A P07327 2/20 0.39
ADH7 P40394 2/20 0.39
CA12 O43570 1/20 0.39
CA7 P43166 1/20 0.39
CA14 Q9ULX7 1/20 0.39
LMNA P02545 1/20 0.38
EPHX1 P07099 6/20 0.36
THRB P10828 1/20 0.35
ALOX15 P16050 1/20 0.35
ACHE P22303 1/20 0.32
MMP2 P08253 1/20 0.32
ADH4 P08319 1/20 0.32
MEN1 O00255 1/20 0.31
HTT P42858 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17409612 0.80 TSHR (0.45) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL49455 0.79
SCHEMBL8952658 0.78
SCHEMBL18991366 0.75
SCHEMBL17046176 0.75
SCHEMBL22342226 0.75
Hydrochloric Acid SCHEMBL1780608 0.73 TSHR (0.39) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL20130854 0.73 TSHR (0.39) TSHRALDH1A1CA1CA2ADH1B
SCHEMBL18991638 0.71
SCHEMBL20130879 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 37 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US claimed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US claimed
US-20230126516-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2023-04-27 US claimed
US-20230089397-A1 AIR GAP FORMING METHOD AND SELECTIVE DEPOSITION METHOD ASM IP HOLDING B.V. (NL) 2023-03-23 US claimed
EP-1678746-B1 Method for forming a dielectric on a copper-containing metallisation INFINEON TECHNOLOGIES AG (DE) 2011-11-30 EP claimed
US-20060252240-A1 Process for forming a dielectric on a copper-containing metallization and capacitor arrangement INFINEON TECHNOLOGIES AG (DE) 2006-11-09 US claimed
US-12588434-B2 Methods for forming dielectric materials with selected polarization for semiconductor devices TOKYO ELECTRON LIMITED (JP) 2026-03-24 US disclosed
US-20250313953-A1 METHODS AND SYSTEMS FOR FORMING DOPED SILICON NITRIDE FILMS ASM IP HOLDING B.V. (NL) 2025-10-09 US disclosed
US-12378667-B2 Methods and systems for forming doped silicon nitride films ASM IP HOLDING B.V. (NL) 2025-08-05 US disclosed
CN-119895076-A Method for depositing silicon-based dielectric film 应用材料公司 2025-04-25 CN disclosed
CN-119776805-A Modified silicon nitride film and preparation method and application thereof 大连恒坤新材料有限公司 2025-04-08 CN disclosed
CN-114250453-B Substrate processing apparatus and method for manufacturing semiconductor device 株式会社国际电气 2024-07-19 CN disclosed
CN-114250452-B Substrate processing apparatus, method for manufacturing semiconductor device, and substrate processing method 株式会社国际电气 2024-07-05 CN disclosed
US-7875521-B2 Semiconductor device and production method thereof FUJITSU SEMICONDUCTOR LIMITED (JP) 2011-01-25 US disclosed
US-20100129971-A1 SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF FUJITSU MICROELECTRONICS LIMITED (JP) 2010-05-27 US disclosed
US-7683362-B2 Semiconductor device and production method thereof FUJITSU MICROELECTRONICS LIMITED (JP) 2010-03-23 US disclosed
US-7678641-B2 Semiconductor device and fabrication process thereof FUJITSU MICROELECTRONICS LIMITED (JP) 2010-03-16 US disclosed
US-20090280612-A1 Semiconductor device and production method thereof FUJITSU MICROELECTRONICS LIMITED (JP) 2009-11-12 US disclosed
US-7579617-B2 Semiconductor device and production method thereof FUJITSU MICROELECTRONICS LIMITED (JP) 2009-08-25 US disclosed
US-20070012913-A1 Semiconductor device and production method thereof FUJITSU LIMITED (JP) 2007-01-18 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-12588434-B2 Methods for forming dielectric materials with selected polarization for semiconductor devices PIEZO1, STAU1, ZRANB2 TSHR 3557/4885ALDH1A1 3199/4885CA1 74/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.