⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL859385 | 0.89 | — | — | |
| SCHEMBL349297 | 0.87 | — | — | |
| SCHEMBL859403 | 0.87 | — | — | |
| SCHEMBL5400961 | 0.75 | — | — | |
| SCHEMBL11896353 | 0.75 | — | — | |
| SCHEMBL5550883 | 0.75 | — | — | |
| SCHEMBL2288941 | 0.75 | — | — | |
| SCHEMBL858142 | 0.75 | — | — | |
| SCHEMBL225522 | 0.75 | — | — | |
| SCHEMBL2206006 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 266 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3768800-A1 | MN-ACTIVATED OXIDOHALIDES AS CONVERSION LUMINESCENT MATERIALS FOR LED-BASED SOLID STATE LIGHT SOURCES | LITEC-Vermögensverwaltungsgesellschaft mbH (DE) | 2021-01-27 | — | — | EP | claimed |
| WO-2019179907-A1 | MN-ACTIVATED OXIDOHALIDES AS CONVERSION LUMINESCENT MATERIALS FOR LED-BASED SOLID STATE LIGHT SOURCES | MERCK PATENT GMBH (DE) | 2019-09-26 | — | — | WO | claimed |
| US-9620677-B2 | Diode having vertical structure | LG INNOTEK CO., LTD. (KR) | 2017-04-11 | — | — | US | claimed |
| US-20150179886-A1 | DIODE HAVING VERTICAL STRUCTURE | SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) | 2015-06-25 | — | — | US | claimed |
| EP-1145331-B1 | LIGHT EMITTING SEMICONDUCTOR DEVICE COMPRISING A MULTIPLE QUANTUM WELL STRUCTURE | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2013-07-17 | — | — | EP | claimed |
| US-7833809-B2 | Light emitting diode, optoelectronic device and method of fabricating the same | NATIONAL CENTRAL UNIVERSITY (TW) | 2010-11-16 | — | — | US | claimed |
| US-20080315226-A1 | LIGHT EMITTING DIODE, OPTOELECTRONIC DEVICE AND METHOD OF FABRICATING THE SAME | NATIONAL CENTRAL UNIVERSITY (TW) | 2008-12-25 | — | — | US | claimed |
| US-7106090-B2 | Optical semiconductor device with multiple quantum well structure | OSRAM OPTO SEMICONDUCTORS GMBH (DE) | 2006-09-12 | — | — | US | claimed |
| US-20050116216-A1 | Optical semiconductor device with multiple quantum well structure | OSRAM OPTO SEMICONDUCTORS GMBH, A GERMAN CORPORATIION | 2005-06-02 | — | — | US | claimed |
| US-6849881-B1 | Optical semiconductor device comprising a multiple quantum well structure | OSRAM GMBH (DE) | 2005-02-01 | — | — | US | claimed |
| US-4971928-A | Method of making a light emitting semiconductor having a rear reflecting surface | GENERAL MOTORS CORPORATION (US) | 1990-11-20 | — | — | US | claimed |
| WO-2024145658-A1 | VARIABLE COMPOSITION TERNARY COMPOUND SEMICONDUCTOR ALLOYS, STRUCTURES, AND DEVICES | OPNOVIX CORP. (US) | 2024-07-04 | — | — | WO | disclosed |
| US-20240222416-A1 | VARIABLE COMPOSITION TERNARY COMPOUND SEMICONDUCTOR ALLOYS, STRUCTURES, AND DEVICES | OPNOVIX CORP. | 2024-07-04 | — | — | US | disclosed |
| EP-4391021-A1 | METHOD FOR MANUFACTURING AN ELECTRONIC DEVICE | Commissariat à l'énergie atomique et aux énergies alternatives (FR) | 2024-06-26 | — | — | EP | disclosed |
| US-20240203731-A1 | METHOD OF MANUFACTURING AN ELECTRONIC DEVICE | Commissariat à I'énergie atomique et aux énergies alternatives (FR) | 2024-06-20 | — | — | US | disclosed |
| US-20030189212-A1 | Method of fabricating vertical devices using a metal support film | SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) | 2003-10-09 | — | — | US | disclosed |
| US-20030138976-A1 | Nitride compound semiconductor, nitride compound semiconductor light emitting device and method of manufacturing the same | KABUSHIKI KAISHA TOSHIBA | 2003-07-24 | — | — | US | disclosed |
| US-6559482-B1 | III-N compound semiconductor bipolar transistor structure and method of manufacture | SOUTH EPITAXY CORPORATION (TW) | 2003-05-06 | — | — | US | disclosed |
| US-20030080344-A1 | Diode having vertical structure and method of manufacturing the same | SUZHOU LEKIN SEMICONDUCTOR CO., LTD. (CN) | 2003-05-01 | — | — | US | disclosed |
| US-6538265-B1 | Indium aluminum nitride based light emitter active layer with indium rich and aluminum rich areas | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-03-25 | — | — | US | disclosed |