SCHEMBL859403

SCHEMBL859403

[Ga+3].[In].[N-3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL6714641 0.87
SCHEMBL5400961 0.87
SCHEMBL496227 0.87
SCHEMBL11896353 0.87
SCHEMBL225522 0.87
SCHEMBL15991 0.82
SCHEMBL4623005 0.82
SCHEMBL245696 0.82
SCHEMBL7167007 0.78
SCHEMBL859385 0.78

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 420 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2024073095-A1 AN ULTRAHIGH EFFICIENCY EXCITONIC DEVICE THE REGENTS OF THE UNIVERSITY OF MICHIGAN (US) 2024-04-04 WO claimed
US-11329209-B1 High temperature optoelectronic devices for power electronics UNITED STATES DEPARTMENT OF ENERGY 2022-05-10 US claimed
CN-107667069-B III-N MEMS structure on group IV substrate 英特尔公司 2022-02-01 CN claimed
US-20210383746-A1 ARCHITECTURE FOR LIGHT EMITTING ELEMENTS IN A LIGHT FIELD DISPLAY GOOGLE LLC 2021-12-09 US claimed
EP-2711720-B1 Device for measuring force components, and method for its production RISE ACREO AB (SE) 2019-05-22 EP claimed
US-9519033-B2 High throughput hot testing method and system for high-brightness light-emitting diodes KLA-TENCOR CORPORATION (US) 2016-12-13 US claimed
US-9393396-B2 Method and composition for hyperthermally treating cells PEYMAN GHOLAM A (US) 2016-07-19 US claimed
US-9366585-B2 Device for measuring force components, and method for its production ACREO SWEDISH ICT AB (SE) 2016-06-14 US claimed
US-9257535-B2 Gate-all-around metal-oxide-semiconductor transistors with gate oxides STC.UNM (US) 2016-02-09 US claimed
US-20160022976-A1 METHOD AND COMPOSITION FOR HYPERTHERMALLY TREATING CELLS PEYMAN GHOLAM A (US) 2016-01-28 US claimed
US-7087924-B2 Gallium-nitride based light emitting diode structure with enhanced light illuminance FORMOSA EPITAXY INCORPORATION (TW) 2006-08-08 US claimed
US-20060043394-A1 Gallium-nitride based light emitting diode structure FORMOSA EPITAXY INCORPORATED (TW) 2006-03-02 US claimed
US-20060038193-A1 Gallium-nitride based light emitting diode structure with enhanced light illuminance JIANG SU CAN YANG OPTOELECTRONIC LTD. (CN) 2006-02-23 US claimed
US-20050116216-A1 Optical semiconductor device with multiple quantum well structure OSRAM OPTO SEMICONDUCTORS GMBH, A GERMAN CORPORATIION 2005-06-02 US claimed
US-6849881-B1 Optical semiconductor device comprising a multiple quantum well structure OSRAM GMBH (DE) 2005-02-01 US claimed
JP-2004319250-A FUEL CELL NIPPON TELEGR & TELEPH CORP <NTT> 2004-11-11 JP claimed
JP-2004534405-A Surface which can be attached to the radiation structure element and manufacturing method thereof 2004-11-11 JP claimed
WO-2004003601-A2 HIGH TRANSMISSION OPTICAL INSPECTION TOOLS KLA-TENCOR TECHNOLOGIES CORPORATION (US) 2004-01-08 WO claimed
US-6661580-B1 High transmission optical inspection tools KLA-TENCOR TECHNOLOGIES CORPORATION 2003-12-09 US claimed
US-4971928-A Method of making a light emitting semiconductor having a rear reflecting surface GENERAL MOTORS CORPORATION (US) 1990-11-20 US claimed