⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13584060 | 1.00 | — | — | |
| Arsenic SCHEMBL17685671 | 0.87 | — | — | |
| SCHEMBL6036906 | 0.87 | — | — | |
| Arsenic SCHEMBL3856681 | 0.87 | — | — | |
| SCHEMBL28635781 | 0.82 | — | — | |
| SCHEMBL4830833 | 0.82 | — | — | |
| SCHEMBL301648 | 0.82 | — | — | |
| SCHEMBL11119384 | 0.82 | — | — | |
| SCHEMBL28255117 | 0.82 | — | — | |
| SCHEMBL41820 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 60 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | claimed |
| WO-2023113353-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | 성균관대학교산학협력단 | 2023-06-22 | — | — | WO | claimed |
| US-20220162501-A1 | QUANTUM DOT AND PREPARING METHOD OF THE SAME | Research & Business Foundation Sungkyunkwan University (KR) | 2022-05-26 | — | — | US | claimed |
| US-10033160-B2 | Interband cascade light emitting devices | THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA (US) | 2018-07-24 | — | — | US | claimed |
| US-20170125979-A1 | Interband Cascade Light Emitting Devices | NATIONAL RESEARCH COUNCIL OF CANADA (CA) | 2017-05-04 | — | — | US | claimed |
| CN-105590989-A | Infrared detector material and preparation method thereof | 11TH RES INST OF CHINA ELECTRONICS TECHNOLOGY GROUP CORP | 2016-05-18 | — | — | CN | claimed |
| CN-103208565-B | Two-color Infrared Detectors material and preparation method thereof | 11TH RESEARCH INSTITUTE OF CHINA ELECTRONICS TECHNOLOGY GROUP CORPORATION (CN) | 2015-09-16 | — | — | CN | claimed |
| CN-103208565-A | Two-color infrared detector material and preparation method thereof | 11TH RES INST OF CHINA ELECTRONICS TECHNOLOGY GROUP CORP | 2013-07-17 | — | — | CN | claimed |
| CN-102931193-A | High-mobility CMOS (complementary Metal oxide semiconductor) integrated unit | INST OF MICROELECTRONICS CAS | 2013-02-13 | — | — | CN | claimed |
| CN-120035200-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-05-23 | — | — | CN | disclosed |
| US-20240327705-A1 | ZINC-DOPED QUANTUM DOT AND MANUFACTURING METHOD THEREFOR | Research & Business Foundation Sungkyunkwan University (KR) | 2024-10-03 | — | — | US | disclosed |
| CN-117590298-A | Magnetic detection device, magnetic detection unit, manufacturing method thereof, and magnetic detection system | 旭化成微电子株式会社 | 2024-02-23 | — | — | CN | disclosed |
| US-11895824-B2 | Vertical 1T-1C DRAM array | INTEL CORPORATION (US) | 2024-02-06 | — | — | US | disclosed |
| US-11764275-B2 | Indium-containing fin of a transistor device with an indium-rich core | INTEL CORPORATION (US) | 2023-09-19 | — | — | US | disclosed |
| US-7670894-B2 | Selective high-k dielectric film deposition for semiconductor device | INTEL CORPORATION (US) | 2010-03-02 | — | — | US | disclosed |
| US-20090272965-A1 | Selective High-K dielectric film deposition for semiconductor device | INTEL CORPORATION | 2009-11-05 | — | — | US | disclosed |
| US-7202503-B2 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon | INTEL CORPORATION (US) | 2007-04-10 | — | — | US | disclosed |
| US-20060001018-A1 | III-V and II-VI compounds as template materials for growing germanium containing film on silicon | INTEL CORPORATION | 2006-01-05 | — | — | US | disclosed |
| CN-1012741-B | RADIO FREQUENCY SPUTTERING METHOD FOR MANUFACTURING SEMICONDUCTOR COMPOUND THIN FILM | SHANGHAI INST METALLURG (CN) | 1991-06-05 | — | — | CN | disclosed |
| CN-85100504-A | The radio frequency sputtering method of preparation semiconductor compound thin film | — | 1986-08-13 | — | — | CN | disclosed |