SCHEMBL498205

SCHEMBL498205

CO[Si](C[Si](C)(C)C)(C[Si](C)(C)C)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3673804 0.80
SCHEMBL3677408 0.78
SCHEMBL9404238 0.76
SCHEMBL9404241 0.76
SCHEMBL3680176 0.76 LMNA (0.31)
SCHEMBL25190374 0.74 LMNA (0.34)
SCHEMBL9404218 0.71
SCHEMBL331284 0.71
SCHEMBL996897 0.71
SCHEMBL331462 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 115 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
WO-2014170799-A1 CROSSLINKABLE VARNISH AND METHOD FOR APPLYING SAME COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES (FR) 2014-10-23 WO claimed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
EP-3935114-B1 PROTECTIVE COATING COMPOSITION AND COATED METALLIC SUBSTRATE COMPRISING SAME MOMENTIVE PERFORMANCE MAT INC (US) 2025-07-16 EP disclosed
US-11939490-B2 Curable surface-protective coating composition, processes for its preparation and application to a metallic substrate and resulting coated metallic substrate MOMENTIVE PERFORMANCE MATERIALS INC. (US) 2024-03-26 US disclosed
CN-113692432-B Protective coating composition and coated metal substrate comprising the same 迈图高新材料公司 2023-10-20 CN disclosed
US-6461419-B1 Curable inkjet printable ink compositions 3M INNOVATIVE PROPERTIES COMPANY 2002-10-08 US disclosed
EP-1238024-A1 CURABLE INKJET PRINTABLE INK COMPOSITIONS 3M Innovative Properties Company (US) 2002-09-11 EP disclosed
WO-2001032789-A1 CURABLE INKJET PRINTABLE INK COMPOSITIONS 3M INNOVATIVE PROPERTIES COMPANY (US) 2001-05-10 WO disclosed
US-5302734-A Pyrolysis of alkoxytrisilaalkanes KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) 1994-04-12 US disclosed