SCHEMBL4994833

SCHEMBL4994833

CCCC(=O)OC1CCCCC1.[Ni]

nearest known ligand 0.71

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
NAAA Q02083 2/20 0.71
EPHX1 P07099 2/20 0.52
HTT P42858 2/20 0.50
CYP2C19 P33261 1/20 0.49
CYP19A1 P11511 2/20 0.44
SMN1; SMN2 Q16637 1/20 0.44
ALDH1A1 P00352 5/20 0.43
KDM4E B2RXH2 2/20 0.43
HPGD P15428 2/20 0.43
LMNA P02545 1/20 0.43
SLC18A3 Q16572 1/20 0.40
TSHR P16473 1/20 0.38
HSD17B10 Q99714 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10033782 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL9134369 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL1695757 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL1695502 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL10033955 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL9131984 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL397795 0.98 NAAA (0.73) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL1313739 0.96 NAAA (0.71) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL8659042 0.96 NAAA (0.71) NAAAEPHX1HTTCYP2C19CYP19A1
SCHEMBL9778101 0.96 NAAA (0.71) NAAAEPHX1HTTCYP2C19CYP19A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-120119288-A Water electrolysis catalyst, preparation method thereof and membrane electrode assembly using catalyst 现代自动车株式会社 2025-06-10 CN claimed
CN-118080013-A Double-atom catalyst loaded by metal organic framework material and preparation and application thereof 中国科学院大连化学物理研究所 2024-05-28 CN claimed
CN-104039688-B Phosphorus-doped nickel nanoparticles and method for making same HANWHA CHEMICAL CORP. (KR) 2016-05-04 CN claimed
CN-102066002-B Original position olefin polymerization catalyst system PROMERUS, LLC (US) 2015-08-26 CN claimed
CN-104039688-A Phosphorus-doped nickel nanoparticles and method for making same HANWHA CHEMICAL CORP 2014-09-10 CN claimed
CN-102066002-A In situ olefin polymerization catalyst system PROMERUS LLC 2011-05-18 CN claimed
US-6348367-B1 Method for manufacturing a semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 2002-02-19 US claimed
US-5237116-A Grignard reagents, diphosphine complex with nickel sulfonate or carboxylate SHELL OIL COMPANY (US) 1993-08-17 US claimed
CN-120119288-A Water electrolysis catalyst, preparation method thereof and membrane electrode assembly using catalyst 现代自动车株式会社 2025-06-10 CN disclosed
CN-118080013-A Double-atom catalyst loaded by metal organic framework material and preparation and application thereof 中国科学院大连化学物理研究所 2024-05-28 CN disclosed
CN-103117327-B For forming the improved method of metal contact 罗门哈斯电子材料有限公司 2016-06-22 CN disclosed
CN-104039688-B Phosphorus-doped nickel nanoparticles and method for making same HANWHA CHEMICAL CORP. (KR) 2016-05-04 CN disclosed
CN-102066002-B Original position olefin polymerization catalyst system PROMERUS, LLC (US) 2015-08-26 CN disclosed
CN-104039688-A Phosphorus-doped nickel nanoparticles and method for making same HANWHA CHEMICAL CORP 2014-09-10 CN disclosed
US-6144041-A A SEMICONDUCTOR WITH ACTIVE REGION IN WHICH NO GRAIN BOUNDARY EXISTS COMPRISING A HYDROGEN OR HALOGEN ELEMENT, NITROGEN AND CARBON ATOMS, OXYGEN ATOMS TO NEUTRALIZE A POINT DEFECT AT SPECIFIC DENSITIES, AND METAL FOR PROMOTING CRYSTALLILZTION SEMICONDUCTOR ENERGY LABORATORY, CO., LTD. (JP) 2000-11-07 US disclosed
US-5879974-A Method of manufacturing a semiconductor device SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1999-03-09 US disclosed
US-5824574-A SINGLE CRYSTAL SILICON, THIN FILM TRANSISTOR SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1998-10-20 US disclosed
US-5821138-A FORMING MULTILAYER OF FIRST AND SECOND INSULATING FILMS, AN AMOROPHOUS SILICON FILMS, HOLDING A METAL ELEMENT THAT ENHANCE THE CRYSTALLIZATION OF SILICON, CRYSTALLIZATION BY HEAT TREATMENT, FORMING THIN FILM TRANSISTOR AND SEALING FILM SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1998-10-13 US disclosed
CN-1129850-A Method of fabricating semiconductor device SEMICONDUCTOR ENERGY LAB (JP) 1996-08-28 CN disclosed
US-4251421-A CROSSLINKABLE FILM-FORMING PRIMERS E. I. DU PONT DE NEMOURS AND COMPANY (US) 1981-02-17 US disclosed