SCHEMBL5002912

SCHEMBL5002912

CCCO[SiH](OCCC)C12CC3CC(CC(C3)C1)C2

nearest known ligand 0.36

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
EPHX2 P34913 8/20 0.36
GRIN2D O15399 1/20 0.34
GRIN3B O60391 1/20 0.34
GRIN1 Q05586 1/20 0.34
GRIN2A Q12879 1/20 0.34
GRIN2B Q13224 1/20 0.34
GRIN2C Q14957 1/20 0.34
GRIN3A Q8TCU5 1/20 0.34
LMNA P02545 1/20 0.34
MEN1 O00255 4/20 0.33
KMT2A Q03164 4/20 0.33
L3MBTL1 Q9Y468 2/20 0.33
ALDH1A1 P00352 1/20 0.33
MAPT P10636 1/20 0.33
ATM Q13315 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5005498 0.82 MEN1 (0.37) EPHX2GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL27316488 0.72 GRIN2D (0.35) EPHX2GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL482480 0.70 ALDH1A1 (0.41) EPHX2LMNAMEN1KMT2AL3MBTL1
Ammonia Solution, Strong SCHEMBL11635039 0.68 ALDH1A1 (0.41) EPHX2LMNAMEN1KMT2AL3MBTL1
SCHEMBL27579245 0.67 SLC22A2 (0.38) EPHX2GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL25812571 0.65 MEN1 (0.46) EPHX2GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL106987 0.64 EPHX2 (0.35) EPHX2LMNAMEN1KMT2AL3MBTL1
SCHEMBL107728 0.64 EPHX2 (0.35) EPHX2LMNAMEN1KMT2AL3MBTL1
SCHEMBL17399706 0.63 EPHX2 (0.34) EPHX2LMNAMEN1KMT2AL3MBTL1
SCHEMBL16682526 0.63 EPHX2 (0.44) EPHX2LMNAMEN1KMT2AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7413775-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2008-08-19 US disclosed
US-7160625-B2 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION (JP) 2007-01-09 US disclosed
US-20060127683-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2006-06-15 US disclosed
US-20030180550-A1 Insulating film material containing an organic silane compound, its production method and semiconductor device TOSOH CORPORATION 2003-09-25 US disclosed