SCHEMBL501899

SCHEMBL501899

O=C(OCCN1CCOCC1)c1cccc2ccccc12

nearest known ligand 0.65

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
CNR1 P21554 4/20 0.65
CNR2 P34972 3/20 0.65
ALDH1A1 P00352 4/20 0.65
HRH3 Q9Y5N1 2/20 0.65
DRD3 P35462 1/20 0.64
KDM4E B2RXH2 1/20 0.58
MAPT P10636 1/20 0.58
SMN1; SMN2 Q16637 1/20 0.58
ATM Q13315 1/20 0.55
LMNA P02545 1/20 0.55
KMT2A Q03164 1/20 0.55
L3MBTL1 Q9Y468 1/20 0.55
GAA P10253 1/20 0.53

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL501399 0.88 HRH3 (0.69) ALDH1A1HRH3DRD3KDM4ELMNA
SCHEMBL501604 0.87 HRH3 (0.67) ALDH1A1HRH3DRD3KDM4ELMNA
Hydrochloric Acid SCHEMBL8642143 0.86 KMT2A (0.68) ALDH1A1HRH3DRD3KDM4ELMNA
SCHEMBL24178214 0.84 ALDH1A1 (0.55) CNR1CNR2ALDH1A1HRH3DRD3
SCHEMBL12550718 0.84 HRH3 (0.67) CNR1CNR2ALDH1A1HRH3DRD3
SCHEMBL11338527 0.83 ALDH1A1 (0.69) ALDH1A1KDM4ESMN1; SMN2ATMLMNA
SCHEMBL24178222 0.82 ATM (0.55) CNR1CNR2ALDH1A1KDM4ESMN1; SMN2
SCHEMBL21705259 0.82 ALDH1A1 (0.67) ALDH1A1SMN1; SMN2ATMLMNAKMT2A
SCHEMBL31006164 0.82 ALDH1A1 (0.67) ALDH1A1KDM4ESMN1; SMN2ATMLMNA
SCHEMBL30259591 0.81 CNR1 (0.69) CNR1CNR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20230152692-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-18 US disclosed
US-20220004101-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-06 US disclosed
US-10792489-B2 Bio-electrode composition, bio-electrode, and method for manufacturing the bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-10-06 US disclosed
US-10734132-B2 Bio-electrode composition, bio-electrode, method for manufacturing the bio-electrode, and polymer compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-08-04 US disclosed
US-10695554-B2 Bio-electrode composition, bio-electrode, method for manufacturing the bio-electrode, and polymer SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-06-30 US disclosed
US-20180223133-A1 BIO-ELECTRODE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING THE BIO-ELECTRODE, AND POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-09 US disclosed
US-20180223133-A1 BIO-ELECTRODE COMPOSITION, BIO-ELECTRODE, METHOD FOR MANUFACTURING THE BIO-ELECTRODE, AND POLYMER COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-08-09 US disclosed
EP-2033966-B1 Novel photoacid generators, resist compositons, and patterning processes SHINETSU CHEMICAL CO (JP) 2015-07-29 EP disclosed
US-8945809-B2 Fluorinated monomer, fluorinated polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-02-03 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-7459261-B2 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-02 US disclosed
US-20080032231-A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. 2008-02-07 US disclosed
US-20080032231-A1 Resist lower layer material, resist lower layer substrate comprising the material and method for forming pattern SHIN-ETSU CHEMICAL CO., LTD. 2008-02-07 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7276324-B2 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-02 US disclosed
US-7255973-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-14 US disclosed
US-7255973-B2 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-14 US disclosed
US-20050106500-A1 Nitrogen-containing organic compound, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2005-05-19 US disclosed