SCHEMBL5025441

SCHEMBL5025441

C[S+](C1CCCCC1)C1CCCCC1=O.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.33
CA1 P00915 1/20 0.30
CA2 P00918 1/20 0.30
CA4 P22748 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4203256 0.99 KMT2A (0.33) KMT2ACA1CA2CA4
SCHEMBL5353043 0.88 CA2 (0.31) KMT2ACA2
SCHEMBL5367168 0.88 CA2 (0.33) KMT2ACA1CA2CA4
SCHEMBL5367225 0.86 KMT2A (0.32) KMT2A
SCHEMBL5364680 0.86 CA2 (0.34) KMT2ACA1CA2CA4
Trifluoromethanesulfonic Acid SCHEMBL65803 0.86 KMT2A (0.39) KMT2ACA1CA2CA4
Trifluoromethanesulfonic Acid SCHEMBL6140981 0.85 CA1 (0.37) KMT2ACA1CA2CA4
Trifluoromethanesulfonic Acid SCHEMBL6140329 0.83 KMT2A (0.35) KMT2ACA1CA2CA4
SCHEMBL6817556 0.82
SCHEMBL6817731 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7423102-B2 Star polymer SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-09 US disclosed
US-20070248911-A1 Pattern forming method and bilayer film IWASAWA HARUO 2007-10-25 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
US-20070072120-A1 Method for producing resin for chemically amplified positive resist SUMITOMO SEIKA CHEMICALS CO., LTD. (JP) 2007-03-29 US disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-6835527-B2 Lithography; forming semiconductors SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-12-28 US disclosed
EP-1041442-B1 Chemical amplification type positive resist SUMITOMO CHEMICAL CO (JP) 2004-10-27 EP disclosed
US-6767686-B2 FOR USE IN LITHOGRAPHY SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2004-07-27 US disclosed
US-20020164540-A1 Chemical amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-11-07 US disclosed
US-20020155378-A1 Chemical amplifying type positive resist compositions SUMITOMO CHEMICAL COMPANY LIMITED (JP) 2002-10-24 US disclosed
US-20020146641-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-10-10 US disclosed
EP-1207423-A1 Chemically amplifying type positive resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-05-22 EP disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-6348297-B1 COMPOSITION COMPRISING ACID GENERATOR COMPRISING ALIPHATIC SULFONIUM SALT, TRIPHENYLSULFONIUM OR DIPHENYLIODONIUM SALT,RESIN HAVING ACID-LABILE GROUP WHICH IS INSOLUBLE IN ALKALI BUT BECOMES SOLUBLE BY ACTION OF ACID SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2002-02-19 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed
EP-1041442-A1 Chemical amplification type positive resist SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2000-10-04 EP disclosed