SCHEMBL5367225

SCHEMBL5367225

O=C1CCCCC1[S+](C1CCCCC1)C1CCCCC1.O=S(=O)([O-])C(F)(F)C(F)(F)C(F)(F)C(F)(F)F

nearest known ligand 0.32

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5353043 0.99 CA2 (0.31) KMT2A
SCHEMBL4203256 0.88 KMT2A (0.33) KMT2A
SCHEMBL5025441 0.86 KMT2A (0.33) KMT2A
Trifluoromethanesulfonic Acid SCHEMBL516028 0.86 KMT2A (0.37) KMT2A
SCHEMBL4179254 0.86
SCHEMBL5364680 0.84 CA2 (0.34) KMT2A
SCHEMBL5367168 0.83 CA2 (0.33) KMT2A
SCHEMBL6823929 0.78
SCHEMBL6817731 0.77
SCHEMBL686045 0.77 KMT2A (0.45) KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070248911-A1 Pattern forming method and bilayer film IWASAWA HARUO 2007-10-25 US disclosed
US-7244549-B2 Pattern forming method and bilayer film JSR CORPORATION (JP) 2007-07-17 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-6846895-B2 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition JSR CORPORATION (JP) 2005-01-25 US disclosed
EP-1142928-B1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR CORP (JP) 2004-02-18 EP disclosed
US-20030191268-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin composition IWASAWA HARUO (JP) 2003-10-09 US disclosed
US-20030073040-A1 Pattern forming method and bilayer film JSR CORPORATION (JP) 2003-04-17 US disclosed
US-6531260-B2 Photoresist JSR CORPORATION (JP) 2003-03-11 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20010041769-A1 Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition JSR CORPORATION (JP) 2001-11-15 US disclosed
EP-1142928-A1 Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds JSR Corporation (JP) 2001-10-10 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed