⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Zinc Ion SCHEMBL516897 | 0.87 | — | — | |
| Zinc Ion SCHEMBL514320 | 0.87 | — | — | |
| Zinc Ion SCHEMBL15813264 | 0.87 | — | — | |
| Zinc Ion SCHEMBL139850 | 0.82 | — | — | |
| SCHEMBL15991 | 0.82 | — | — | |
| SCHEMBL4623005 | 0.82 | — | — | |
| SCHEMBL245696 | 0.82 | — | — | |
| Zinc Ion SCHEMBL504004 | 0.78 | — | — | |
| Zinc Ion SCHEMBL15792845 | 0.67 | — | — | |
| SCHEMBL4300171 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9129888-B2 | Nitride-based semiconductor device and manufacturing method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-09-08 | — | — | US | claimed |
| US-20140021481-A1 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-23 | — | — | US | claimed |
| US-9985173-B2 | II-III-N semiconductor nanoparticles and method of making same | SHARP KABUSHIKI KAISHA (JP) | 2018-05-29 | — | — | US | disclosed |
| US-9129888-B2 | Nitride-based semiconductor device and manufacturing method thereof | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-09-08 | — | — | US | disclosed |
| US-8900489-B2 | II-III-N semiconductor nanoparticles and method of making same | SHARP KABUSHIKI KAISHA (JP) | 2014-12-02 | — | — | US | disclosed |
| US-20140021481-A1 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2014-01-23 | — | — | US | disclosed |
| CN-102024836-B | Light emitting element | EPISTAR CORP | 2013-09-25 | — | — | CN | disclosed |
| US-20120025139-A1 | II-III-V COMPOUND SEMICONDUCTOR | SHARP KABUSHIKI KAISHA (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20120025146-A1 | II-III-N SEMICONDUCTOR NANOPARTICLES AND METHOD OF MAKING SAME | SHARP KABUSHIKI KAISHA (JP) | 2012-02-02 | — | — | US | disclosed |
| CN-102024836-A | Light emitting element | EPISTAR CORP | 2011-04-20 | — | — | CN | disclosed |