SCHEMBL508431

SCHEMBL508431

C[SiH](C[SiH](C)O[SiH3])O[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL51902 0.74
SCHEMBL1889664 0.74
SCHEMBL972795 0.72
SCHEMBL9576213 0.72
SCHEMBL51578 0.72
SCHEMBL6842419 0.69
SCHEMBL7650660 0.69
SCHEMBL10527312 0.67
SCHEMBL6140725 0.67
SCHEMBL5819879 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 355 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-6348725-B1 None US claimed
US-20190221771-A1 BUFFER LAYER FOR ORGANIC LIGHT EMITTING DEVICES AND METHOD OF MAKING THE SAME UNIVERSAL DISPLAY CORPORATION 2019-07-18 US claimed
US-20170117503-A1 BUFFER LAYER FOR ORGANIC LIGHT EMITTING DEVICES AND METHOD OF MAKING THE SAME UNIVERSAL DISPLAY CORPORATION 2017-04-27 US claimed
US-20160118621-A1 HYBRID BARRIER LAYER FOR SUBSTRATES AND ELECTRONIC DEVICES UNIVERSAL DISPLAY CORPORATION 2016-04-28 US claimed
WO-2015002756-A1 HYBRID BARRIER LAYER FOR SUBSTRATES AND ELECTRONIC DEVICES UNIVERSAL DISPLAY CORPORATION (US) 2015-01-08 WO claimed
US-8349746-B2 Microelectronic structure including a low k dielectric and a method of controlling carbon distribution in the structure APPLIED MATERIALS, INC. (US) 2013-01-08 US claimed
WO-2012087493-A2 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE APPLIED MATERIALS, INC. (US) 2012-06-28 WO claimed
US-20120156890-A1 IN-SITU LOW-K CAPPING TO IMPROVE INTEGRATION DAMAGE RESISTANCE APPLIED MATERIALS, INC. (US) 2012-06-21 US claimed
WO-2012064491-A2 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM APPLIED MATERIALS, INC. (US) 2012-05-18 WO claimed
US-20120121823-A1 PROCESS FOR LOWERING ADHESION LAYER THICKNESS AND IMPROVING DAMAGE RESISTANCE FOR THIN ULTRA LOW-K DIELECTRIC FILM APPLIED MATERIALS, INC. (US) 2012-05-17 US claimed
US-20010026849-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2001-10-04 US claimed
EP-1131846-A1 CVD NANOPOROUS SILICA LOW DIELECTRIC CONSTANT FILMS Applied Materials, Inc. (US) 2001-09-12 EP claimed
US-20010005546-A1 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. 2001-06-28 US claimed
US-20010004479-A1 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. 2001-06-21 US claimed
US-6245690-B1 EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM APPLIED MATERIALS, INC. 2001-06-12 US claimed
US-6171945-B1 CVD nanoporous silica low dielectric constant films APPLIED MATERIALS, INC. 2001-01-09 US claimed
EP-1063692-A1 Process for depositing a low dielectric constant film Applied Materials, Inc. (US) 2000-12-27 EP claimed
EP-1055012-A2 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS Applied Materials, Inc. (US) 2000-11-29 EP claimed
WO-2000024050-A1 CVD NANOPOROUS SILICA LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. (US) 2000-04-27 WO claimed
WO-1999041423-A2 PLASMA PROCESSES FOR DEPOSITING LOW DIELECTRIC CONSTANT FILMS APPLIED MATERIALS, INC. (US) 1999-08-19 WO claimed