Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Propene SCHEMBL5143760 | 0.90 | ALDH1A1 (0.32) | TSHRALDH1A1 | |
| Propene SCHEMBL6131231 | 0.86 | ALDH1A1 (0.38) | TSHRALDH1A1 | |
| SCHEMBL3048553 | 0.84 | TSHR (0.32) | TSHRALDH1A1 | |
| Propene SCHEMBL5146965 | 0.83 | ALDH1A1 (0.41) | TSHRALOX15ALDH1A1 | |
| SCHEMBL9222871 | 0.80 | MEN1 (0.31) | TSHR | |
| Propene SCHEMBL487681 | 0.79 | ALDH1A1 (0.46) | TSHRALOX15ALDH1A1 | |
| Propene SCHEMBL219263 | 0.79 | ALDH1A1 (0.46) | TSHRALOX15ALDH1A1 | |
| Propene SCHEMBL15666 | 0.79 | ALDH1A1 (0.46) | TSHRALOX15ALDH1A1 | |
| Propene SCHEMBL10277714 | 0.79 | ALDH1A1 (0.46) | TSHRALOX15ALDH1A1 | |
| SCHEMBL1071020 | 0.78 | TSHR (0.33) | TSHRALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7285369-B2 | photoresist composition comprising resins that increases solubility in alkali developing solution by the action of an acid and photoacid generators, which exhibits high sensitivity, high resolution and stability | FUJIFILM CORPORATION (JP) | 2007-10-23 | — | — | US | disclosed |
| US-7241551-B2 | Positive-working resist composition | FUJIFILM CORPORATION (JP) | 2007-07-10 | — | — | US | disclosed |
| US-20050079441-A1 | Positive resist composition and pattern forming method using the same | FUJI PHOTO FILM CO., LTD. | 2005-04-14 | — | — | US | disclosed |
| US-20050064329-A1 | Positive resist composition and pattern formation method using the same | FUJI PHOTO FILM CO., LTD. | 2005-03-24 | — | — | US | disclosed |
| US-20040248035-A1 | Positive-working resist composition | FUJI PHOTO FILM CO., LTD. | 2004-12-09 | — | — | US | disclosed |
| US-20040009429-A1 | Positive-working photosensitive composition | FUJI PHOTO FILM CO., LTD. | 2004-01-15 | — | — | US | disclosed |
| US-6596458-B1 | Used in an ultramicrolithography process or another photofabrication process for the production of very large scale integrated circuits or high capacity microchips | FUJI PHOTO FILM CO., LTD. (JP) | 2003-07-22 | — | — | US | disclosed |
| US-6589705-B1 | Positive-working photoresist composition | FUJI PHOTO FILM CO., LTD. (JP) | 2003-07-08 | — | — | US | disclosed |
| US-6506535-B1 | A positive working photoresist composition for use in the production of semiconductor integrated circuit devices, mask for the production of integrated circuits, printed wiring boards, liquid crystal panels | FUJI PHOTO FILM CO., LTD. (JP) | 2003-01-14 | — | — | US | disclosed |