SCHEMBL5154161

SCHEMBL5154161

COC(=O)c1cc(C)c(Br)cc1C(=O)OC

nearest known ligand 0.45

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SOS1 Q07889 1/20 0.45
NOTUM Q6P988 1/20 0.42
MAPT P10636 3/20 0.42
CA12 O43570 2/20 0.41
CA1 P00915 2/20 0.41
CA2 P00918 2/20 0.41
CA7 P43166 2/20 0.41
CA9 Q16790 2/20 0.41
CA14 Q9ULX7 2/20 0.41
PDK2 Q15119 1/20 0.41
PDK4 Q16654 1/20 0.41
ALDH1A1 P00352 3/20 0.40
KDM4E B2RXH2 2/20 0.40
CYP3A4 P08684 1/20 0.40
ACHE P22303 1/20 0.40
NR4A2 P43354 1/20 0.40
XDH P47989 1/20 0.40
LMNA P02545 1/20 0.39
TSHR P16473 1/20 0.39
KMT2A Q03164 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5154168 0.93 LCK (0.44) SOS1NOTUMMAPTCA12CA1
SCHEMBL2538919 0.90 KMT2A (0.44) SOS1NOTUMMAPTCA12CA1
SCHEMBL30107294 0.90 NOTUM (0.45) SOS1NOTUMMAPTCA12CA1
SCHEMBL18420521 0.90 NOTUM (0.45) SOS1NOTUMMAPTCA12CA1
SCHEMBL155216 0.90 NOTUM (0.45) SOS1NOTUMMAPTCA12CA1
SCHEMBL31385726 0.90 NOTUM (0.45) SOS1NOTUMMAPTCA12CA1
SCHEMBL23051540 0.87 SOS1 (0.50) SOS1NOTUMMAPTCA12CA1
SCHEMBL168324 0.86 CA1 (0.50) SOS1NOTUMMAPTCA12CA1
SCHEMBL168426 0.86 CA1 (0.50) SOS1NOTUMMAPTCA12CA1
SCHEMBL20036871 0.86 KMT2A (0.44) SOS1NOTUMMAPTCA12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116803970-A 6,6' -disubstituted-3, 3', 4' -biphenyl tetracarboxylic acid and dianhydride thereof and preparation method thereof 中国石油化工股份有限公司 2023-09-26 CN disclosed
EP-1013650-B1 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part HITACHI CHEM DUPONT MICROSYS (JP) 2007-01-24 EP disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-6329494-B1 HIGH-SPEED DEVELOPABILITY, HIGH RESOLUTION AND GOOD DIMENSIONAL ACCURACY TO SUIT THEM TO THE PRODUCTION OF INTERLAYER INSULATING FILMS OR SURFACE-PROTECTING FILMS IN SEMICONDUCTOR DEVICES HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2001-12-11 US disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed