SCHEMBL5154168

SCHEMBL5154168

COC(=O)c1cc(Br)c(C)cc1C(=O)O

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LCK P06239 1/20 0.44
FYN P06241 1/20 0.44
HSD17B10 Q99714 3/20 0.42
SOS1 Q07889 1/20 0.41
NOTUM Q6P988 1/20 0.38
TSHR P16473 1/20 0.38
MAPT P10636 1/20 0.38
L3MBTL1 Q9Y468 1/20 0.37
CA12 O43570 2/20 0.37
CA1 P00915 2/20 0.37
CA2 P00918 2/20 0.37
CA7 P43166 2/20 0.37
CA9 Q16790 2/20 0.37
CA14 Q9ULX7 2/20 0.37
GAA P10253 2/20 0.37
PDK2 Q15119 1/20 0.37
PDK4 Q16654 1/20 0.37
KDM4E B2RXH2 1/20 0.37
HPGD P15428 1/20 0.37
ALDH1A1 P00352 2/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5154161 0.93 SOS1 (0.45) HSD17B10SOS1NOTUMTSHRMAPT
SCHEMBL27308415 0.87 MAPT (0.43) HSD17B10NOTUMTSHRMAPTCA12
SCHEMBL4626748 0.87 HSD17B10 (0.45) LCKFYNHSD17B10NOTUMTSHR
SCHEMBL2538919 0.83 KMT2A (0.44) LCKFYNHSD17B10SOS1NOTUM
SCHEMBL31385726 0.83 NOTUM (0.45) HSD17B10SOS1NOTUMTSHRMAPT
SCHEMBL155216 0.83 NOTUM (0.45) HSD17B10SOS1NOTUMTSHRMAPT
SCHEMBL18420521 0.83 NOTUM (0.45) HSD17B10SOS1NOTUMTSHRMAPT
SCHEMBL30107294 0.83 NOTUM (0.45) HSD17B10SOS1NOTUMTSHRMAPT
SCHEMBL29633948 0.81 LCK (0.60) LCKFYNHSD17B10SOS1TSHR
SCHEMBL2319843 0.81 LCK (0.60) LCKFYNHSD17B10SOS1TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1013650-B1 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part HITACHI CHEM DUPONT MICROSYS (JP) 2007-01-24 EP disclosed
US-6600053-B2 Useful for producing polyimide precursors or polyimides having low thermal expansion and low residual stress HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2003-07-29 US disclosed
US-20020037991-A1 Photosensitive resin composition HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2002-03-28 US disclosed
US-6329494-B1 HIGH-SPEED DEVELOPABILITY, HIGH RESOLUTION AND GOOD DIMENSIONAL ACCURACY TO SUIT THEM TO THE PRODUCTION OF INTERLAYER INSULATING FILMS OR SURFACE-PROTECTING FILMS IN SEMICONDUCTOR DEVICES HITACHI CHEMICAL DUPONT MICROSYSTEMS LTD. (JP) 2001-12-11 US disclosed
EP-1013650-A2 Tetracarboxylic dianhydride, derivative and production thereof, polyimide precursor, polyimide, resin composition, photosensitive resin composition, method of forming relief pattern, and electronic part Hitachi Chemical DuPont MicroSystems Ltd. (JP) 2000-06-28 EP disclosed