⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2351482 | 0.87 | — | — | |
| SCHEMBL705240 | 0.87 | — | — | |
| SCHEMBL2354422 | 0.87 | — | — | |
| SCHEMBL50218 | 0.82 | — | — | |
| SCHEMBL2421060 | 0.78 | — | — | |
| SCHEMBL2877684 | 0.67 | — | — | |
| SCHEMBL2240443 | 0.67 | — | — | |
| Zinc Ion SCHEMBL504276 | 0.67 | — | — | |
| SCHEMBL721061 | 0.67 | — | — | |
| SCHEMBL3164255 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 33 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9257535-B2 | Gate-all-around metal-oxide-semiconductor transistors with gate oxides | STC.UNM (US) | 2016-02-09 | — | — | US | claimed |
| US-20150263134-A1 | GATE-ALL-AROUND METAL-OXIDE-SEMICONDUCTOR TRANSISTORS WITH GATE OXIDES | DEFENSE THREAT REDUCTION AGENCY, US DOD | 2015-09-17 | — | — | US | claimed |
| US-9076813-B1 | Gate-all-around metal-oxide-semiconductor transistors with gate oxides | STC.UNM (US) | 2015-07-07 | — | — | US | claimed |
| US-7087924-B2 | Gallium-nitride based light emitting diode structure with enhanced light illuminance | FORMOSA EPITAXY INCORPORATION (TW) | 2006-08-08 | — | — | US | claimed |
| US-7049742-B2 | Method and structure for substrate having inserted electrodes for flat display device and the device using the structure | JEONG, KWANG-HO (KR) | 2006-05-23 | — | — | US | claimed |
| US-20060043394-A1 | Gallium-nitride based light emitting diode structure | FORMOSA EPITAXY INCORPORATED (TW) | 2006-03-02 | — | — | US | claimed |
| US-20060038193-A1 | Gallium-nitride based light emitting diode structure with enhanced light illuminance | JIANG SU CAN YANG OPTOELECTRONIC LTD. (CN) | 2006-02-23 | — | — | US | claimed |
| US-20050098533-A1 | Method and structure for substrate having inserted electrodes for flat display device and the device using the structure | JEONG, KWANG-HO (KR) | 2005-05-12 | — | — | US | claimed |
| WO-2002032193-A1 | METHOD AND STRUCTURE FOR SUBSTRATE HAVING INSERTED ELECTRODES FOR FLAT DISPLAY DEVICE AND THE DEVICE USING THE STRUCTURE | JEONG KWANG HO (KR) | 2002-04-18 | — | — | WO | claimed |
| US-20240145623-A1 | LIGHT ABSORBING BARRIER FOR LED FABRICATION PROCESSES | APPLIED MATERIALS, INC. (US) | 2024-05-02 | — | — | US | disclosed |
| EP-4356437-A1 | LIGHT ABSORBING BARRIER FOR LED FABRICATION PROCESSES | Applied Materials, Inc. (US) | 2024-04-24 | — | — | EP | disclosed |
| US-11901477-B2 | Light absorbing barrier for LED fabrication processes | APPLIED MATERIALS, INC. (US) | 2024-02-13 | — | — | US | disclosed |
| EP-4315434-A1 | NUCLEATION LAYERS FOR GROWTH OF GALLIUM-AND-NITROGEN-CONTAINING REGIONS | Applied Materials, Inc. (US) | 2024-02-07 | — | — | EP | disclosed |
| US-20230299236-A1 | SUBSTRATE PROCESSING FOR GaN GROWTH | APPLIED MATERIALS, INC. (US) | 2023-09-21 | — | — | US | disclosed |
| US-7049742-B2 | Method and structure for substrate having inserted electrodes for flat display device and the device using the structure | JEONG, KWANG-HO (KR) | 2006-05-23 | — | — | US | disclosed |
| US-20060043394-A1 | Gallium-nitride based light emitting diode structure | FORMOSA EPITAXY INCORPORATED (TW) | 2006-03-02 | — | — | US | disclosed |
| US-20060043394-A1 | Gallium-nitride based light emitting diode structure | FORMOSA EPITAXY INCORPORATED (TW) | 2006-03-02 | — | — | US | disclosed |
| US-20060038193-A1 | Gallium-nitride based light emitting diode structure with enhanced light illuminance | JIANG SU CAN YANG OPTOELECTRONIC LTD. (CN) | 2006-02-23 | — | — | US | disclosed |
| US-20050098533-A1 | Method and structure for substrate having inserted electrodes for flat display device and the device using the structure | JEONG, KWANG-HO (KR) | 2005-05-12 | — | — | US | disclosed |
| WO-2002032193-A1 | METHOD AND STRUCTURE FOR SUBSTRATE HAVING INSERTED ELECTRODES FOR FLAT DISPLAY DEVICE AND THE DEVICE USING THE STRUCTURE | JEONG KWANG HO (KR) | 2002-04-18 | — | — | WO | disclosed |