SCHEMBL523162

SCHEMBL523162

CC(=O)OC(C)[Si](C)(C)Cl

nearest known ligand 0.48

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.48
CHRM2 P08172 1/20 0.37
CHRM4 P08173 1/20 0.37
CHRM1 P11229 1/20 0.37
TBXA2R P21731 1/20 0.37
GALR3 O60755 1/20 0.35
MAPT P10636 1/20 0.35
BLM P54132 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
TRPV1 Q8NER1 1/20 0.31
ALDH1A1 P00352 2/20 0.30
TDP1 Q9NUW8 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4820046 0.85 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL523167 0.82 TSHR (0.50) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL22325533 0.79 TSHR (0.52) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10893076 0.73 TSHR (0.46) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL11851987 0.70 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL141447 0.70 TSHR (0.48) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10889597 0.70 TSHR (0.37) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL3338084 0.69 TSHR (0.41) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL2268030 0.68 TSHR (0.46) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL11755918 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-118983520-A Preparation of lithium iron manganese phosphate battery electrolyte 安徽得壹能源科技有限公司 2024-11-19 CN claimed
WO-2024172770-A1 PRINTABLE WAX, METHOD OF PRINTING, AND METHOD FOR FLOW VISCOSITY CONTROL AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) 2024-08-22 WO claimed
WO-2018051290-A1 ANODE MATERIALS FOR LITHIUM-ION ELECTROCHEMCIAL CELLS AND METHODS OF MAKING AND USING SAME 3M INNOVATIVE PROPERTIES COMPANY (US) 2018-03-22 WO claimed
US-8039049-B2 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2011-10-18 US claimed
US-7405168-B2 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMITED (JP) 2008-07-29 US claimed
US-20080076262-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2008-03-27 US claimed
US-7345000-B2 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2008-03-18 US claimed
WO-2007040834-A2 PLURAL TREATMENT STEP PROCESS FOR TREATING DIELECTRIC FILMS TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040816-A2 TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
WO-2007040856-A2 PLASMA-ASSISTED VAPOR PHASE TREATMENT OF LOW DIELECTRIC CONSTANT FILMS USING A BATCH PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2007-04-12 WO claimed
US-20070077782-A1 Treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077353-A1 Plasma-assisted vapor phase treatment of low dielectric constant films using a batch processing system TOKYO ELECTRON LIMITED (JP) 2007-04-05 US claimed
US-20070077781-A1 Plural treatment step process for treating dielectric films TOKYO ELECTRON LIMTED (JP) 2007-04-05 US claimed
WO-2006091264-A1 METHOD AND SYSTEM FOR TREATING A DIELECTRIC FILM TOKYO ELECTRON LIMITED (JP) 2006-08-31 WO claimed
US-20050215072-A1 Method and system for treating a dielectric film TOKYO ELECTRON LIMITED (JP) 2005-09-29 US claimed
CN-118983520-A Preparation of lithium iron manganese phosphate battery electrolyte 安徽得壹能源科技有限公司 2024-11-19 CN disclosed
CN-118983520-A Preparation of lithium iron manganese phosphate battery electrolyte 安徽得壹能源科技有限公司 2024-11-19 CN disclosed
EP-1323742-A2 Radiation sensitive refractive index changing composition and refractive index changing method JSR Corporation (JP) 2003-07-02 EP disclosed
US-20030064303-A1 Composition having refractive index sensitively changeable by radiation and method for forming refractive index pattern JSR CORPORATION (JP) 2003-04-03 US disclosed
EP-1235104-A1 COMPOSITION HAVING REFRACTIVE INDEX SENSITIVELY CHANGEABLE BY RADIATION AND METHOD FOR FORMING REFRACTIVE INDEX PATTERN JSR Corporation (JP) 2002-08-28 EP disclosed