SCHEMBL3338084

SCHEMBL3338084

CCO[Si](C)(C)C(C)OC(C)=O

nearest known ligand 0.41

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.41
CHRM2 P08172 1/20 0.36
CHRM4 P08173 1/20 0.36
CHRM1 P11229 1/20 0.36
TBXA2R P21731 1/20 0.36
ALDH1A1 P00352 2/20 0.36
LMNA P02545 1/20 0.36
HSD17B10 Q99714 1/20 0.36
GALR3 O60755 1/20 0.35
MAPT P10636 1/20 0.35
BLM P54132 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
TRPV1 Q8NER1 1/20 0.31
TDP1 Q9NUW8 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL66309 0.85 TSHR (0.42) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL16537597 0.81 TSHR (0.40) TSHRALDH1A1
SCHEMBL3344601 0.78 TSHR (0.34) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL22325533 0.72 TSHR (0.52) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10965276 0.72 TSHR (0.42) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL26118830 0.72 TSHR (0.38) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL27688036 0.72 TSHR (0.38) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10608002 0.71 ALDH1A1 (0.45) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL3519293 0.70 TSHR (0.39) TSHRCHRM2CHRM4CHRM1TBXA2R
SCHEMBL10605213 0.69 ALDH1A1 (0.39) TSHRALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-20100151384-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2010-06-17 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed