SCHEMBL525959

SCHEMBL525959

C=CC(=O)OC1CC2CC1CC2CC(O)(C(F)(F)F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL23059473 0.92
SCHEMBL776340 0.87
SCHEMBL22788093 0.83
SCHEMBL18400959 0.82 ALDH1A1 (0.32)
SCHEMBL524812 0.80
SCHEMBL23963451 0.80 TSHR (0.36)
SCHEMBL13716021 0.80
SCHEMBL22853269 0.80
SCHEMBL12589390 0.80 CHRM2 (0.34)
SCHEMBL5897668 0.78 TSHR (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 124 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-20230161249-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-20230161249-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND COMPOUND FUJIFILM CORPORATION (JP) 2023-05-25 US disclosed
US-11156917-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-10-26 US disclosed
US-11067890-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2021-07-20 US disclosed
US-10982061-B2 Photosensitive resin composition and display device including the same SAMSUNG DISPLAY CO., LTD. (KR) 2021-04-20 US disclosed
WO-2021039407-A1 ACTIVE-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, PATTERN FORMATION METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-03-04 WO disclosed
US-20210040370-A1 THERMAL CONDUCTIVE LAYER, PHOTOSENSITIVE LAYER, PHOTOSENSITIVE COMPOSITION, MANUFACTURING METHOD FOR THERMAL CONDUCTIVE LAYER, AND LAMINATE AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2021-02-11 US disclosed
US-20200393756-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2020-12-17 US disclosed
US-20090035697-A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKAKOGYO CO.,LTD. (JP) 2009-02-05 US disclosed
US-20090035697-A1 NEGATIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKAKOGYO CO.,LTD. (JP) 2009-02-05 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-7385079-B2 Process for producing α-substituted acrylic norbornanyyl compounds CENTRAL GLASS COMPANY, LIMITED (JP) 2008-06-10 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20070218401-A1 liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2007-09-20 US disclosed
US-20050131248-A1 Process for producing alpha-substituted acrylic norbornanyyl compounds CENTRAL GLASS COMPANY, LIMITED (JP) 2005-06-16 US disclosed