Predicted protein targets (top 13)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DNM1 | Q05193 | 8/20 | 0.35 |
| ▸ | MEN1 | O00255 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.35 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.35 |
| ▸ | TSHR | P16473 | 1/20 | 0.35 |
| ▸ | EPHX1 | P07099 | 1/20 | 0.35 |
| ▸ | RRM1 | P23921 | 1/20 | 0.32 |
| ▸ | SPHK1 | Q9NYA1 | 1/20 | 0.32 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.31 |
| ▸ | GNAI3 | P08754 | 1/20 | 0.30 |
| ▸ | GNAO1 | P09471 | 1/20 | 0.30 |
| ▸ | GNAI1 | P63096 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Octane SCHEMBL7700946 | 1.00 | DNM1 (0.35) | DNM1MEN1KMT2AALDH1A1TSHR | |
| SCHEMBL15025 | 0.89 | CYP2C9 (0.32) | CYP2C9CYP2C19 | |
| SCHEMBL9720257 | 0.87 | CYP2C9 (0.33) | CYP2C9CYP2C19 | |
| SCHEMBL1896553 | 0.87 | CYP2C9 (0.31) | CYP2C9CYP2C19 | |
| SCHEMBL28242935 | 0.87 | CYP2C9 (0.31) | CYP2C9CYP2C19 | |
| SCHEMBL1899110 | 0.87 | CYP2C9 (0.31) | CYP2C9CYP2C19 | |
| Ammonia Solution, Strong SCHEMBL15633005 | 0.87 | CYP2C9 (0.31) | CYP2C9CYP2C19 | |
| SCHEMBL4509964 | 0.84 | — | — | |
| SCHEMBL6737631 | 0.83 | CYP2C9 (0.42) | CYP2C9CYP2C19 | |
| SCHEMBL11728756 | 0.82 | TDP1 (0.41) | MEN1KMT2AALDH1A1CYP2C9CYP2C19 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-6713797-B1 | Textured Bi-based oxide ceramic films | ADVANCED TECHNOLOGY MATERIALS, INC. | 2004-03-30 | — | — | US | claimed |
| US-6133051-A | CHEMICAL VAPOR DEPOSITION AND ANNEALING TO TRANSFORM IT INTO A FERROELECTRIC LAYER | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2000-10-17 | — | — | US | claimed |
| EP-0990059-B1 | LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING BISMUTH-CONTAINING CERAMIC THIN FILMS USEFUL IN FERROELECTRIC MEMORY DEVICES | ADVANCED TECH MATERIALS (US) | 2007-10-03 | — | — | EP | disclosed |
| US-7005303-B2 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2006-02-28 | — | — | US | disclosed |
| US-20040209384-A1 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices | POCO GRAPHITE, INC. | 2004-10-21 | — | — | US | disclosed |
| US-6730523-B2 | VAPORIZING A BISMUTH BETA-DIKETONATE PRECURSOR AND CONTACTING VAPORIZED PRECURSOR WITH SUBSTRATE TO DEPOSIT BISMUTH OR A BISMUTH-CONTAINING FILM THEREON | ADVANCED TECHNOLOGY MATERIALS, INC. | 2004-05-04 | — | — | US | disclosed |
| US-6444264-B2 | PRECURSOR COMPOSITION FOR VAPOR DEPOSITION OF METAL CONTAINING FILM ON SUBSTRATE, COMPOSITION INCLUDES SOLVENTS COMPRISING ALKANES HAVING DISSOLVED THEREIN COMPATIBLE METAL ORGANIC BETA DIKETONATE COMPOUNDS, ALKOXIDE LIGANDS | ADVANCED TECHNOLOGY MATERIALS, INC. | 2002-09-03 | — | — | US | disclosed |
| US-6344079-B1 | SOLVENT MEDIUM COMPRISING ONE OR MORE ALKANES HAVING DISSOLVED THEREIN ONE OR MORE COMPATIBLE METAL ORGANIC COMPOUND(S) WHEREIN AT LEAST ONE METALORGANIC COMPOUND IS A BISMUTH DIKETONATE LEWIS BASE ADDUCT | ADVANCED TECHNOLOGY MATERIALS, INC. | 2002-02-05 | — | — | US | disclosed |
| US-20010041374-A1 | Low temperature chemical vapor deposition process for forming bismuth-containing ceramic thin films useful in ferroelectric memory devices | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-11-15 | — | — | US | disclosed |
| US-6303391-B1 | VAPORIZING BISMUTH .BETA.-DIKETONATE PRECURSOR TO FORM A VAPORIZED PRECURSOR, AND CONTACTING VAPORS WITH SUBSTRATE TO DEPOSIT BISMUTH OR BISMUTH CONTAINING FILM | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-10-16 | — | — | US | disclosed |
| US-20010004470-A1 | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-06-21 | — | — | US | disclosed |
| US-6214105-B1 | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. | 2001-04-10 | — | — | US | disclosed |
| EP-0990059-A4 | LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING BISMUTH-CONTAINING CERAMIC THIN FILMS USEFUL IN FERROELECTRIC MEMORY DEVICES | ADVANCED TECH MATERIALS (US) | 2000-11-02 | — | — | EP | disclosed |
| EP-0990059-A1 | LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING BISMUTH-CONTAINING CERAMIC THIN FILMS USEFUL IN FERROELECTRIC MEMORY DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 2000-04-05 | — | — | EP | disclosed |
| US-5916359-A | Alkane and polyamine solvent compositions for liquid delivery chemical vapor deposition | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 1999-06-29 | — | — | US | disclosed |
| WO-1999000530-A1 | LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS FOR FORMING BISMUTH-CONTAINING CERAMIC THIN FILMS USEFUL IN FERROELECTRIC MEMORY DEVICES | ADVANCED TECHNOLOGY MATERIALS, INC. (US) | 1999-01-07 | — | — | WO | disclosed |