SCHEMBL528410

SCHEMBL528410

CC[SiH2][SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Lindane SCHEMBL9815928 0.80 LMNA (0.36)
SCHEMBL1070853 0.67
SCHEMBL21933252 0.63
Butane SCHEMBL3895285 0.63
SCHEMBL8385848 0.59
SCHEMBL208611 0.59
SCHEMBL49670 0.59
Propane SCHEMBL23701103 0.56
Bromide SCHEMBL5819633 0.56
SCHEMBL21357940 0.56

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-4128328-B1 METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER MADE OF MONOCRYSTALLINE SIC ON A CARRIER SUBSTRATE MADE OF SIC SOITEC SILICON ON INSULATOR (FR) 2024-04-03 EP claimed
EP-4066275-B1 METHOD FOR MANUFACTURING A COMPOSITE STRUCTURE COMPRISING A THIN LAYER OF MONOCRYSTALLINE SIC ON AN SIC CARRIER SUBSTRATE SOITEC SILICON ON INSULATOR (FR) 2023-12-27 EP claimed
CN-108623558-A A kind of synthetic method of 2- (the bromo- 2- luorobenzyls of 5-) benzothiophene 瑞孚信江苏药业股份有限公司 2018-10-09 CN claimed
CN-105324842-A Hybrid barrier layer for substrates and electronic devices UNIVERSAL DISPLAY CORP 2016-02-10 CN claimed
CN-1698188-B Method for depositing a low dielectric constant film APPLIED MATERIALS INC 2010-09-08 CN claimed
CN-101553599-A Multilayered coatings for use on electronic devices or other articles UNIV PRINCETON (US) 2009-10-07 CN claimed
CN-1698188-A Method for depositing a low dielectric constant film APPLIED MATERIALS INC (US) 2005-11-16 CN claimed
US-4183819-A INORGANIC OXIDE POWDERS, ALKYL SILANES, ALKALINE EARTH METAL CARBONATES AND A FATTY ACID STOLOVE SOLOMON 1980-01-15 US claimed
US-12217959-B2 Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium Kokusai Electric Corporation (JP) 2025-02-04 US disclosed
CN-118834057-A High-temperature-resistant material coated aerogel heat-insulating composite material and preparation method thereof 台湾气凝胶科技材料开发股份有限公司 2024-10-25 CN disclosed
EP-4431645-A1 METHOD FOR PRODUCING HETEROEPITAXIAL WAFER Shin-Etsu Handotai Co., Ltd. (JP) 2024-09-18 EP disclosed
CN-108475624-B Method for manufacturing semiconductor device, substrate processing apparatus, and recording medium 株式会社国际电气 2023-10-20 CN disclosed
CN-109476918-B Elastomer composition and use thereof 美国陶氏有机硅公司 2021-12-31 CN disclosed
US-10985013-B2 Method and precursors for manufacturing 3D devices VERSUM MATERIALS US, LLC (US) 2021-04-20 US disclosed
EP-0630933-A2 A method of producing a semiconducting material NIPPON OIL CO. LTD. (JP) 1994-12-28 EP disclosed
US-5304622-A Process for producing polysilanes NIPPON OIL COMPANY, LTD. (JP) 1994-04-19 US disclosed
EP-0551771-A2 Process for producing polysilanes NIPPON OIL CO. LTD. (JP) 1993-07-21 EP disclosed
WO-1993007844-A1 HIGH TEMPERATURE RESISTANT IDENTIFYING LABELS W.H. BRADY CO. (US) 1993-04-29 WO disclosed
EP-0241739-A1 Method of modifying surfaces and application of the method in forming layered structures International Business Machines Corporation (US) 1987-10-21 EP disclosed
EP-0019674-B1 PROCESS FOR THE PRODUCTION OF A HOLLOW CATALYST CARRIER MADE OF TRANSITION-ALUMINA Sumitomo Aluminium Smelting Company Limited (JP) 1984-07-25 EP disclosed