⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL8178400 | 0.87 | — | — | |
| SCHEMBL8428836 | 0.75 | — | — | |
| SCHEMBL5357990 | 0.75 | — | — | |
| SCHEMBL7032532 | 0.75 | — | — | |
| SCHEMBL1225124 | 0.75 | — | — | |
| SCHEMBL7156558 | 0.75 | — | — | |
| SCHEMBL3938862 | 0.75 | — | — | |
| SCHEMBL9590939 | 0.75 | — | — | |
| SCHEMBL986829 | 0.75 | — | — | |
| SCHEMBL5947139 | 0.75 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20070097323-A1 | Electro-optical wobulator | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 2007-05-03 | — | — | US | claimed |
| JP-2000504882-A | — | — | 2000-04-18 | — | — | JP | claimed |
| US-5888585-A | APPLYING A LIQUID PRECURSOR CONTAINING BARIUM, STRONTIUM, AND NIOBIUM, TREATING BY BAKING, ANNEALING, OR EXPOSING TO VACUUM TO FORM THE NON-FERROELECTRIC OXIDE; MEMORY CELL CAPACITORS | SYMETRIX CORPORATION (US) | 1999-03-30 | — | — | US | claimed |
| EP-0880800-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1998-12-02 | — | — | EP | claimed |
| WO-1997029511-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1997-08-14 | — | — | WO | claimed |
| WO-2007053218-A1 | ELECTRO-OPTICAL WOBULATOR | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. (US) | 2007-05-10 | — | — | WO | disclosed |
| US-20070097323-A1 | Electro-optical wobulator | HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. | 2007-05-03 | — | — | US | disclosed |
| US-5888585-A | APPLYING A LIQUID PRECURSOR CONTAINING BARIUM, STRONTIUM, AND NIOBIUM, TREATING BY BAKING, ANNEALING, OR EXPOSING TO VACUUM TO FORM THE NON-FERROELECTRIC OXIDE; MEMORY CELL CAPACITORS | SYMETRIX CORPORATION (US) | 1999-03-30 | — | — | US | disclosed |
| US-5888585-A | APPLYING A LIQUID PRECURSOR CONTAINING BARIUM, STRONTIUM, AND NIOBIUM, TREATING BY BAKING, ANNEALING, OR EXPOSING TO VACUUM TO FORM THE NON-FERROELECTRIC OXIDE; MEMORY CELL CAPACITORS | SYMETRIX CORPORATION (US) | 1999-03-30 | — | — | US | disclosed |
| US-5888585-A | APPLYING A LIQUID PRECURSOR CONTAINING BARIUM, STRONTIUM, AND NIOBIUM, TREATING BY BAKING, ANNEALING, OR EXPOSING TO VACUUM TO FORM THE NON-FERROELECTRIC OXIDE; MEMORY CELL CAPACITORS | SYMETRIX CORPORATION (US) | 1999-03-30 | — | — | US | disclosed |
| EP-0880800-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1998-12-02 | — | — | EP | disclosed |
| EP-0880800-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1998-12-02 | — | — | EP | disclosed |
| US-5751034-A | High dielectric constant barium-strontium-niobium oxides for integrated circuit applications | SYMETRIX CORPORATION (US) | 1998-05-12 | — | — | US | disclosed |
| US-5751034-A | High dielectric constant barium-strontium-niobium oxides for integrated circuit applications | SYMETRIX CORPORATION (US) | 1998-05-12 | — | — | US | disclosed |
| US-5751034-A | High dielectric constant barium-strontium-niobium oxides for integrated circuit applications | SYMETRIX CORPORATION (US) | 1998-05-12 | — | — | US | disclosed |
| WO-1997029511-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1997-08-14 | — | — | WO | disclosed |
| WO-1997029511-A1 | HIGH DIELECTRIC CONSTANT BARIUM-STRONTIUM-NIOBIUM OXIDES FOR INTEGRATED CIRCUIT APPLICATIONS | SYMETRIX CORPORATION (US) | 1997-08-14 | — | — | WO | disclosed |