SCHEMBL5360495

SCHEMBL5360495

CCOC(C)OC1C2C=CC(C2)C1OC(C)OCC

nearest known ligand 0.42

Predicted protein targets (top 2)

geneUniProtsupporting neighboursconfidence
LMNA P02545 1/20 0.42
ALDH1A1 P00352 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5347646 0.85
SCHEMBL5352677 0.82 ALDH1A1 (0.31) ALDH1A1
SCHEMBL5357676 0.77 SMN1; SMN2 (0.30)
SCHEMBL5353089 0.74 LMNA (0.46) LMNA
SCHEMBL5357224 0.74 LMNA (0.37) LMNAALDH1A1
SCHEMBL18906441 0.73 LMNA (0.44) LMNA
SCHEMBL3368002 0.73 POLB (0.42) LMNAALDH1A1
SCHEMBL14295509 0.72 LMNA (0.42) LMNA
SCHEMBL5347117 0.69 CYP3A4 (0.36)
SCHEMBL1615327 0.69 ALDH1A1 (0.31) ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170153549-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING ORGANIC GROUP HAVING ALIPHATIC POLYCYCLIC STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-06-01 US disclosed
US-20170153549-A1 SILICON-CONTAINING RESIST UNDERLAYER FILM-FORMING COMPOSITION HAVING ORGANIC GROUP HAVING ALIPHATIC POLYCYCLIC STRUCTURE NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-06-01 US disclosed
US-7202016-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2007-04-10 US disclosed
EP-1085379-B1 Radiation-sensitive resin composition JSR CORP (JP) 2006-01-04 EP disclosed
US-20050214680-A1 Radiation-sensitive resin composition MIYAJI MASAAKI 2005-09-29 US disclosed
US-6933094-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2005-08-23 US disclosed
US-6623907-B2 Chemical amplified photoresist JSR CORPORATION (JP) 2003-09-23 US disclosed
US-6482568-B1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-11-19 US disclosed
US-20020058201-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2002-05-16 US disclosed
EP-1193558-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2002-04-03 EP disclosed
US-20010023050-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2001-09-20 US disclosed
EP-1122605-A2 Radiation-sensitive resin composition JSR Corporation (JP) 2001-08-08 EP disclosed
EP-1085379-A1 Radiation-sensitive resin composition JSR Corporation (JP) 2001-03-21 EP disclosed