SCHEMBL5362598

SCHEMBL5362598

NCc1ccc(-c2ccccc2-c2ccccc2)cc1

nearest known ligand 0.77

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ TAAR1 Q96RJ0 4/20 0.77
▸ LOXL2 Q9Y4K0 1/20 0.59
▸ HRH3 Q9Y5N1 1/20 0.59
▸ DPP4 P27487 1/20 0.58
▸ CSNK2A1 P68400 2/20 0.57
▸ CYP2A6 P11509 1/20 0.48
▸ ADRB2 P07550 1/20 0.48
▸ SGK1 O00141 1/20 0.47
▸ MAOB P27338 2/20 0.47
▸ LTA4H P09960 1/20 0.47
▸ ALDH1A1 P00352 1/20 0.46
▸ HSD17B10 Q99714 1/20 0.46
▸ IDO1 P14902 1/20 0.45
▸ AGXT P21549 1/20 0.45
▸ BACE1 P56817 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrogen Sulfide SCHEMBL27541593 0.98 TAAR1 (0.74) TAAR1LOXL2HRH3DPP4CSNK2A1
SCHEMBL28089504 0.95 TAAR1 (0.68) TAAR1LOXL2HRH3DPP4CSNK2A1
Hydrogen Sulfide SCHEMBL27625603 0.90 TAAR1 (0.63) TAAR1LOXL2HRH3DPP4CSNK2A1
SCHEMBL27661119 0.89 TAAR1 (0.68) TAAR1LOXL2HRH3DPP4CSNK2A1
SCHEMBL28281371 0.89 TAAR1 (0.68) TAAR1LOXL2HRH3DPP4CSNK2A1
Toluene SCHEMBL28751230 0.88 TAAR1 (0.61) TAAR1LOXL2HRH3DPP4CSNK2A1
SCHEMBL131842 0.87 TAAR1 (1.00) TAAR1LOXL2HRH3CSNK2A1CYP2A6
SCHEMBL22291708 0.87 TAAR1 (1.00) TAAR1LOXL2HRH3CSNK2A1CYP2A6
SCHEMBL22202237 0.87 TAAR1 (1.00) TAAR1LOXL2HRH3CSNK2A1CYP2A6
SCHEMBL28208288 0.87 TAAR1 (1.00) TAAR1LOXL2HRH3CSNK2A1CYP2A6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 26 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-1997939-B Method of forming resist pattern, positive resist composition, and layered product TOKYO OHKA KOGYO CO LTD 2011-03-30 — — CN claimed
CN-108011053-A A kind of preparation method of organic EL display panel 江西沃格光电股份有限公司 2018-05-08 — — CN disclosed
CN-102161622-B Compound provided with phenol substituent, method for preparing the compound, and resist composition containing the compound KUMHO PETROCHEMICAL CO LTD 2014-11-26 — — CN disclosed
CN-102161622-A Compound provided with phenol substituent, method for preparing the compound, and resist composition containing the compound KUMHO PETROCHEMICAL CO LTD 2011-08-24 — — CN disclosed
CN-1997939-B Method of forming resist pattern, positive resist composition, and layered product TOKYO OHKA KOGYO CO LTD 2011-03-30 — — CN disclosed
CN-101770173-A Chemically amplified positive resist composition SUMITOMO CHEMICAL CO 2010-07-07 — — CN disclosed
EP-1575964-B1 N-(BENZYL)AMINOALKYL CARBOXYLATE, PHOSPHINATES, PHOSPHONATES AND TETRAZOLES AS EDG RECEPTOR AGONISTS MERCK & CO INC (US) 2009-11-11 — — EP disclosed
CN-100410810-C Plus photoresist composition and resist pattern forming method TOKYO OHKA KOGYO CO LTD (JP) 2008-08-13 — — CN disclosed
CN-101168509-A Polyatomic phenol compound and chemical amplification type photoresist composition containing the same SUMITOMO CHEMICAL CO (JP) 2008-04-30 — — CN disclosed
CN-100381421-C Process for producing triarylsulfonium salt WAKO PURE CHEM IND LTD (JP) 2008-04-16 — — CN disclosed
US-20060030736-A1 Method for producing aromatic amino compound IDEMITSU KOSAN CO., LTD. (JP) 2006-02-09 — — US disclosed
CN-1208687-C High-resolution photosnesiitve resin composition usable with I-line and method of forming patter AZ ELECTRONIC MATERIALS JAPAN (JP) 2005-06-29 — — CN disclosed
CN-1573552-A Plus photoresist composition and resist pattern forming method TOKYO OHKA KOGYO CO LTD (JP) 2005-02-02 — — CN disclosed
CN-1170204-C Radiation-sensitive resin composition �������ؽ��ڣ�BVI�����޹�˾ 2004-10-06 — — CN disclosed
CN-1169021-C Photosensitive resin composition and method of improving dry etching resistance of photosensitive resin composition 克拉瑞特金融(BVI)有限公司 2004-09-29 — — CN disclosed
CN-1518685-A Method for forming thick resist pattern ���Ͽع����޹�˾ 2004-08-04 — — CN disclosed
US-20040082813-A1 Method for producting aromatic amino compound IDEMITSU KOSAN CO., LTD. (JP) 2004-04-29 — — US disclosed
CN-1401096-A High resolution photosensitive resin composition for i-line and method of forming pattern CLARIANT INT LTD (CH) 2003-03-05 — — CN disclosed
CN-1313962-A Photosensitive resin composition and method of improving dry etching resistance of photosensitive resin composition CLARIANT INT LTD (CH) 2001-09-19 — — CN disclosed
CN-1294703-A Photosensitive resin compsn. CLARIANT INT LTD (CH) 2001-05-09 — — CN disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060030736-A1 Method for producing aromatic amino compound SLC7A1, SLC43A1, AHR TAAR1 74/4885LOXL2 2494/4885HRH3 34/4885
US-20040082813-A1 Method for producting aromatic amino compound ADRM1, SLC7A1, AHR TAAR1 31/4885LOXL2 2639/4885HRH3 70/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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