Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.41 |
| ▸ | TSHR | P16473 | 2/20 | 0.41 |
| ▸ | MEN1 | O00255 | 2/20 | 0.40 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.40 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.40 |
| ▸ | HSP90AA1 | P07900 | 1/20 | 0.39 |
| ▸ | PRKCA | P17252 | 1/20 | 0.38 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.38 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.38 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.38 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.38 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.38 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.38 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.38 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.36 |
| ▸ | CNR2 | P34972 | 1/20 | 0.36 |
| ▸ | ATM | Q13315 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14696502 | 0.77 | EPHX2 (0.48) | LMNAALDH1A1TSHRMEN1KMT2A | |
| SCHEMBL14593923 | 0.75 | EPHX2 (0.47) | LMNAALDH1A1TSHRKMT2AEPHX2 | |
| SCHEMBL131064 | 0.73 | CYP17A1 (0.55) | LMNAALDH1A1MEN1KMT2AMAPK1 | |
| SCHEMBL1071514 | 0.73 | ALDH1A1 (0.46) | LMNAALDH1A1TSHRMEN1KMT2A | |
| SCHEMBL5557567 | 0.71 | MEN1 (0.43) | ALDH1A1MEN1KMT2AMAPK1EPHX2 | |
| SCHEMBL15960981 | 0.71 | ALDH1A1 (0.39) | LMNAALDH1A1TSHRMEN1KMT2A | |
| SCHEMBL135702 | 0.71 | ALDH1A1 (0.53) | LMNAALDH1A1TSHRMEN1KMT2A | |
| SCHEMBL26029101 | 0.70 | DPP4 (0.44) | ALDH1A1MEN1KMT2AMAPK1EPHX2 | |
| SCHEMBL15453467 | 0.70 | EPHX2 (0.42) | LMNAALDH1A1MEN1KMT2AMAPK1 | |
| SCHEMBL14416839 | 0.69 | ALDH1A1 (0.42) | LMNAALDH1A1TSHRKMT2AMAPK1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7119156-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-10-10 | — | — | US | disclosed |
| US-7070905-B2 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-07-04 | — | — | US | disclosed |
| US-7063932-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-06-20 | — | — | US | disclosed |
| US-7029823-B2 | Resist composition | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-04-18 | — | — | US | disclosed |
| US-20050048400-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-03-03 | — | — | US | disclosed |
| US-20050037283-A1 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050037284-A1 | Polymer; radiation transparent pattern against short wavelengths and etching resistance; semiconductors | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-17 | — | — | US | disclosed |
| US-20050031990-A1 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-20050031991-A1 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2005-02-10 | — | — | US | disclosed |
| US-6824957-B2 | RESIST COMPOSITION HAVING HIGH TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND HIGH DRY- ETCHING RESISTANCE, CAPABLE OF FORMING A RESIST PATTERN EXCELLENT IN ADHESION AND RESOLUTION BY MEANS OF ALKALI DEVELOPMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-11-30 | — | — | US | disclosed |
| US-20040043324-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-03-04 | — | — | US | disclosed |
| US-6660450-B2 | Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-12-09 | — | — | US | disclosed |
| US-20030149225-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-08-07 | — | — | US | disclosed |
| US-6541597-B2 | Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20020098441-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-07-25 | — | — | US | disclosed |
| US-6410748-B1 | Alicycli c group-containing monomer | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-06-25 | — | — | US | disclosed |
| US-6303266-B1 | FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-10-16 | — | — | US | disclosed |
| US-6291129-B1 | LIGHT SENSITIVE ELEMENT WITH UNSATURATED POLYMERS | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-09-18 | — | — | US | disclosed |
| US-6228552-B1 | ALKALI SOLUBLE RESIN | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-05-08 | — | — | US | disclosed |