SCHEMBL5403637

SCHEMBL5403637

CCC(C)c1ccc(S(OS(=O)(=O)c2cccc(C(F)(F)F)c2)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPSR1 Q6W5P4 1/20 0.44
NR3C1 P04150 1/20 0.41
PGR P06401 1/20 0.41
AR P10275 1/20 0.41
ESR2 Q92731 1/20 0.41
CA1 P00915 1/20 0.41
CA2 P00918 1/20 0.41
MMP1 P03956 1/20 0.41
MMP2 P08253 1/20 0.41
MMP9 P14780 1/20 0.41
MMP8 P22894 1/20 0.41
MMP13 P45452 1/20 0.41
SLC1A3 P43003 1/20 0.41
SLC1A2 P43004 1/20 0.41
CYP3A4 P08684 7/20 0.40
CYP2C19 P33261 6/20 0.40
CYP2C9 P11712 5/20 0.40
ALDH1A1 P00352 3/20 0.40
HPGD P15428 1/20 0.40
CYP1A2 P05177 3/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408790 0.88 NPSR1 (0.44) NPSR1NR3C1PGRARESR2
SCHEMBL5404731 0.86 CA1 (0.43) NPSR1NR3C1PGRARESR2
SCHEMBL5400963 0.84 CA1 (0.51) NPSR1NR3C1PGRARESR2
SCHEMBL6282707 0.83 MAPT (0.43) NPSR1NR3C1PGRARESR2
SCHEMBL5414615 0.83 NPSR1 (0.42) NPSR1NR3C1PGRARESR2
SCHEMBL5408438 0.82 FFAR1 (0.51) NPSR1NR3C1PGRARESR2
SCHEMBL5400810 0.82 FFAR1 (0.51) NPSR1NR3C1PGRARESR2
SCHEMBL5410122 0.81 TRPV1 (0.43) NPSR1NR3C1PGRARESR2
SCHEMBL5415249 0.81 CA1 (0.43) NPSR1NR3C1PGRARESR2
SCHEMBL5403631 0.80 NPSR1 (0.44) NPSR1NR3C1PGRARESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed