SCHEMBL5415249

SCHEMBL5415249

CC(C)(C)c1ccc(S(OS(=O)(=O)c2cccc(C(F)(F)F)c2)(c2ccccc2)c2ccccc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA1 P00915 2/20 0.43
CA2 P00918 2/20 0.43
MMP1 P03956 1/20 0.43
MMP2 P08253 1/20 0.43
MMP9 P14780 1/20 0.43
MMP8 P22894 1/20 0.43
MMP13 P45452 1/20 0.43
NR3C1 P04150 1/20 0.43
PGR P06401 1/20 0.43
AR P10275 1/20 0.43
ESR2 Q92731 1/20 0.43
HSD11B1 P28845 2/20 0.43
CYP3A4 P08684 3/20 0.42
CYP2C19 P33261 3/20 0.42
CYP2C9 P11712 2/20 0.42
ALDH1A1 P00352 1/20 0.42
HPGD P15428 1/20 0.42
CYP2D6 P10635 1/20 0.42
HTT P42858 1/20 0.41
PPARG P37231 2/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5414894 0.91 HSD11B1 (0.43) NR3C1PGRARESR2HSD11B1
SCHEMBL5400963 0.90 CA1 (0.51) CA1CA2MMP1MMP2MMP9
SCHEMBL3134802 0.89 HSD11B1 (0.47) HSD11B1ALDH1A1MEN1KMT2AHSD17B3
SCHEMBL3134871 0.89 HSD11B1 (0.47) HSD11B1ALDH1A1MEN1KMT2AHSD17B3
SCHEMBL5400810 0.88 FFAR1 (0.51) CA1CA2MMP1MMP2MMP9
SCHEMBL5408438 0.88 FFAR1 (0.51) CA1CA2MMP1MMP2MMP9
SCHEMBL5398511 0.85 FFAR1 (0.53) CA1CA2MMP1MMP2MMP9
SCHEMBL6282707 0.85 MAPT (0.43) CA1CA2MMP1MMP2MMP9
SCHEMBL5408790 0.85 NPSR1 (0.44) CA1CA2MMP1MMP2MMP9
SCHEMBL451539 0.84 HSD11B1 (0.53) CA1CA2HSD11B1ALDH1A1MEN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed