SCHEMBL5404526

SCHEMBL5404526

C=CC[Si](OCC)(OCC)C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5398107 0.83
SCHEMBL6063236 0.78 TSHR (0.33)
SCHEMBL6063258 0.77
SCHEMBL3341024 0.77
SCHEMBL5408285 0.76
SCHEMBL839595 0.73
SCHEMBL706400 0.72 LMNA (0.32)
SCHEMBL704032 0.72 LMNA (0.32)
SCHEMBL4999883 0.72 LMNA (0.32)
SCHEMBL437305 0.70 TSHR (0.30)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-117355632-A Method for producing planarizing film, material for planarizing film, and planarizing film 东曹株式会社 2024-01-05 CN disclosed
WO-2022255290-A1 METHOD FOR MANUFACTURING PLANARIZING FILM, PLANARIZING FILM MATERIAL, AND PLANARIZING FILM 東ソー株式会社 2022-12-08 WO disclosed
WO-2022230944-A1 PLANARIZING FILM MANUFACTURING METHOD, PLANARIZING FILM MATERIAL, AND PLANARIZING FILM 東ソー株式会社 2022-11-03 WO disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-7015292-B2 Silicon-containing olefin copolymer, crosslinkable rubber composition thereof, and use thereof MITSUI CHEMICALS, INC. (JP) 2006-03-21 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed
US-20050038214-A1 Silicon-containing olefin copolymer, crosslinkable rubber composition thereof, and use thereof MITSUI CHEMICALS, INC. (JP) 2005-02-17 US disclosed