Predicted protein targets (top 7)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 1/20 | 0.52 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.52 |
| ▸ | EPHX2 | P34913 | 2/20 | 0.42 |
| ▸ | NAAA | Q02083 | 1/20 | 0.38 |
| ▸ | CYP19A1 | P11511 | 2/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.32 |
| ▸ | CYP17A1 | P05093 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL13719251 | 0.84 | TSHR (0.54) | TSHRNPSR1EPHX2NAAACYP19A1 | |
| SCHEMBL43550 | 0.84 | NAAA (0.41) | TSHRNPSR1EPHX2NAAACYP19A1 | |
| Water SCHEMBL27689962 | 0.83 | NAAA (0.40) | TSHRNPSR1EPHX2NAAACYP19A1 | |
| Hydrogen Sulfide SCHEMBL27689942 | 0.83 | NAAA (0.40) | TSHRNPSR1EPHX2NAAACYP19A1 | |
| SCHEMBL3305304 | 0.82 | NAAA (0.40) | TSHRNPSR1NAAA | |
| SCHEMBL15290899 | 0.81 | TSHR (0.33) | TSHRNPSR1 | |
| Methyl Alcohol SCHEMBL17107776 | 0.81 | NAAA (0.42) | NPSR1EPHX2NAAACYP19A1CA2 | |
| SCHEMBL1592333 | 0.80 | NAAA (0.33) | TSHRNAAACYP19A1 | |
| SCHEMBL18973515 | 0.80 | NAAA (0.35) | TSHRNPSR1EPHX2NAAACYP19A1 | |
| SCHEMBL6852019 | 0.79 | NAAA (0.33) | TSHRNPSR1NAAACYP19A1CA2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 27 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240336868-A1 | COMPOSITIONS COMPRISING ADAMANTYL ESTER-CONTAINING COMPOUNDS | THE PROCTER & GAMBLE COMPANY | 2024-10-10 | — | — | US | disclosed |
| US-20110165521-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-07 | — | — | US | disclosed |
| US-20110165521-A1 | PROCESS FOR PRODUCING PHOTORESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-07 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7119156-B2 | Resist resin | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-10-10 | — | — | US | disclosed |
| US-7070905-B2 | Pattern forming process | KABUSHIKI KAISHA TOSHIBA (JP) | 2006-07-04 | — | — | US | disclosed |
| US-6824957-B2 | RESIST COMPOSITION HAVING HIGH TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND HIGH DRY- ETCHING RESISTANCE, CAPABLE OF FORMING A RESIST PATTERN EXCELLENT IN ADHESION AND RESOLUTION BY MEANS OF ALKALI DEVELOPMENT | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-11-30 | — | — | US | disclosed |
| EP-0915077-B1 | POLYMERIZABLE ADAMANTANE DERIVATIVES AND PROCESS FOR PRODUCING THE SAME | DAICEL CHEM (JP) | 2004-11-17 | — | — | EP | disclosed |
| US-20040043324-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2004-03-04 | — | — | US | disclosed |
| US-6660450-B2 | Acrylic ester polymer having pendant adamantane rings with oxygenated substitution; ultraviolet light transparency; dry etching resistance | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-12-09 | — | — | US | disclosed |
| US-20030149225-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-08-07 | — | — | US | disclosed |
| US-6541597-B2 | Resist resin having in its structure a bridged bond containing aliphatic ring; pattern excellent in transparency against short wavelength light and dry-etching resistance can be formed by alkali development with high resolution. | KABUSHIKI KAISHA TOSHIBA (JP) | 2003-04-01 | — | — | US | disclosed |
| US-20020098441-A1 | Resin useful for resist, resist composition and pattern forming process using the same | KABUSHIKI KAISHA TOSHIBA (JP) | 2002-07-25 | — | — | US | disclosed |
| US-6303266-B1 | FOR PATTERN HAVING TRANSPARENCY AGAINST SHORT-WAVELENGTH LIGHT AND DRY-ETCHING RESISTANCE CAN BE FORMED BY ALKALI DEVELOPMENT WITH HIGH RESOLUTION | KABUSHIKI KAISHA TOSHIBA (JP) | 2001-10-16 | — | — | US | disclosed |
| US-6235851-B1 | ESTERIFICATION OR AMIDATION REACTION OF AN ADAMANTANE DERIVATIVE; GROUP 3A METAL CATALYST | DAICEL CHEMICAL INDUSTRIES, LTD. (JP) | 2001-05-22 | — | — | US | disclosed |
| EP-0915077-A1 | POLYMERIZABLE ADAMANTANE DERIVATIVES AND PROCESS FOR PRODUCING THE SAME | Daicel Chemical Industries, Ltd. (JP) | 1999-05-12 | — | — | EP | disclosed |