Predicted protein targets (top 6)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NAAA | Q02083 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.32 |
| ▸ | CYP19A1 | P11511 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.30 |
| ▸ | CA2 | P00918 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18973515 | 0.91 | NAAA (0.35) | NAAATSHRNPSR1CYP19A1CA2 | |
| SCHEMBL43550 | 0.86 | NAAA (0.41) | NAAATSHRNPSR1CYP19A1CYP2C9 | |
| Hydrogen Sulfide SCHEMBL27689942 | 0.84 | NAAA (0.40) | NAAATSHRNPSR1CYP19A1CYP2C9 | |
| Water SCHEMBL27689962 | 0.84 | NAAA (0.40) | NAAATSHRNPSR1CYP19A1CYP2C9 | |
| SCHEMBL29308886 | 0.83 | ATM (0.34) | NAAA | |
| Methyl Alcohol SCHEMBL17107776 | 0.82 | NAAA (0.42) | NAAANPSR1CYP19A1CYP2C9CA2 | |
| SCHEMBL1592333 | 0.82 | NAAA (0.33) | NAAATSHRCYP19A1 | |
| SCHEMBL5404973 | 0.79 | TSHR (0.52) | NAAATSHRNPSR1CYP19A1CA2 | |
| Alcohol SCHEMBL17107774 | 0.78 | NAAA (0.39) | NAAATSHRNPSR1CYP19A1 | |
| SCHEMBL4710621 | 0.77 | HSD11B1 (0.35) | NAAATSHRNPSR1CYP19A1CYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-7163781-B2 | Process for producing a semiconductor device | KABUSHIKI KAISHA TOSHIBA (JP) | 2007-01-16 | — | — | US | disclosed |
| US-6794112-B2 | COMPRISES ALKALI SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANESULFONATE), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION | FUJITSU LIMITED (JP) | 2004-09-21 | — | — | US | disclosed |
| US-6794113-B2 | COMPRISES ALKALI-SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANESULFONIC ACID), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION | FUJITSU LIMITED (JP) | 2004-09-21 | — | — | US | disclosed |
| US-6787288-B2 | COMPRISES ALKALI SOLUBLE POLYMER (POLYVINYLPHENOL), PHOTOACID GENERATOR (TRIPHENYL SULFONIUM TRIFLUOROMETHANSULFONATE), AND ADAMANTYL ALCOHOL CAPABLE OF DEHYDRATION BONDING WITH POLYMER; ANTISWELLING; IMPROVED RESOLUTION | FUJITSU LIMITED (JP) | 2004-09-07 | — | — | US | disclosed |
| US-6773867-B2 | COATING A NEGATIVE RESIST ONTO A TARGET SUBSTRATE, SELECTIVELY EXPOSING FORMED RESIST FILM TO IMAGE-FORMING RADIATION THAT CAN INDUCE DECOMPOSITION OF PHOTO ACID GENERATOR OF RESIST; DEVELOPING EXPOSED RESIST FILM WITH A BASIC AQUEOUS SOLUTION | FUJITSU LIMITED (JP) | 2004-08-10 | — | — | US | disclosed |
| US-20030143482-A1 | Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices | FUJITSU LIMITED (JP) | 2003-07-31 | — | — | US | disclosed |
| US-20030138724-A1 | Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices | FUJITSU LIMITED (JP) | 2003-07-24 | — | — | US | disclosed |
| US-20030138725-A1 | Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices | FUJITSU LIMITED (JP) | 2003-07-24 | — | — | US | disclosed |
| US-20030138726-A1 | Negative resist composition, method for the formation of resist patterns and process for the production of electronic devices | FUJITSU LIMITED (JP) | 2003-07-24 | — | — | US | disclosed |
| US-6506534-B1 | A negative resist composition developable with basic solutions and being itself soluble in basic aqueous solutions but, upon exposure to said image-forming radiation, being rendered insoluble in basic aqueous solutions at its exposed sections | FUJITSU LIMITED (JP) | 2003-01-14 | — | — | US | disclosed |