SCHEMBL5405151

SCHEMBL5405151

COc1cccc([SiH2]C(C)CC(C)(CC(C)[SiH2]c2cccc(OC)c2OC)CC(C)[SiH2]c2cccc(OC)c2OC)c1OC

nearest known ligand 0.42

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.39
NFE2L2 Q16236 5/20 0.35
GAA P10253 1/20 0.33
ALDH1A1 P00352 1/20 0.33
KDM4E B2RXH2 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33
MAPK1 P28482 1/20 0.33
HPGD P15428 1/20 0.32
HTT P42858 1/20 0.32
HTR2C P28335 1/20 0.32
NPC1 O15118 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5415576 0.87 SMN1; SMN2 (0.38) SMN1; SMN2NFE2L2ALDH1A1KDM4EL3MBTL1
SCHEMBL5419292 0.84 SMN1; SMN2 (0.36) SMN1; SMN2NFE2L2ALDH1A1KDM4EL3MBTL1
SCHEMBL5419649 0.81 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2ALDH1A1KDM4EL3MBTL1
SCHEMBL5420234 0.81 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2ALDH1A1KDM4EL3MBTL1
SCHEMBL5412506 0.80 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2GAAALDH1A1KDM4E
SCHEMBL5409995 0.80 SMN1; SMN2 (0.38) SMN1; SMN2NFE2L2GAAALDH1A1
SCHEMBL645567 0.79 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2ALDH1A1KDM4EMAPK1
SCHEMBL5423670 0.77 SMN1; SMN2 (0.44) SMN1; SMN2NFE2L2ALDH1A1KDM4EMAPK1
SCHEMBL5412499 0.76 SMN1; SMN2 (0.44) SMN1; SMN2NFE2L2ALDH1A1KDM4EL3MBTL1
SCHEMBL5415004 0.75 SMN1; SMN2 (0.37) SMN1; SMN2NFE2L2ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed