SCHEMBL5405600

SCHEMBL5405600

C=C(CC12CC3CC(CC(C3)C1)C2)OC(=C)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.45

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.44
BPTF Q12830 1/20 0.41
GRIN2D O15399 2/20 0.41
GRIN3B O60391 2/20 0.41
GRIN1 Q05586 2/20 0.41
GRIN2A Q12879 2/20 0.41
GRIN2B Q13224 2/20 0.41
GRIN2C Q14957 2/20 0.41
GRIN3A Q8TCU5 2/20 0.41
CA12 O43570 2/20 0.38
CA1 P00915 2/20 0.38
CA2 P00918 2/20 0.38
CA9 Q16790 2/20 0.38
LMNA P02545 1/20 0.38
P2RX7 Q99572 1/20 0.37
SMN1; SMN2 Q16637 1/20 0.37
TSHR P16473 1/20 0.36
HSD11B1 P28845 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8779341 0.86 ALDH1A1 (0.46) ALDH1A1BPTFLMNAP2RX7SMN1; SMN2
SCHEMBL5491237 0.78 KDM4E (0.31)
SCHEMBL5665931 0.78 GRIN2D (0.45) ALDH1A1GRIN2DGRIN3BGRIN1GRIN2A
SCHEMBL6374520 0.76 ALDH1A1 (0.47) ALDH1A1BPTFGRIN2DGRIN3BGRIN1
SCHEMBL3021927 0.73 ALDH1A1 (0.59) ALDH1A1BPTFGRIN2DGRIN3BGRIN1
SCHEMBL19895701 0.73 ALDH1A1 (0.53) ALDH1A1BPTFCA12CA1CA2
SCHEMBL1073599 0.71 ALDH1A1 (0.57) ALDH1A1BPTFP2RX7SMN1; SMN2TSHR
SCHEMBL13079619 0.70 ALDH1A1 (0.46) ALDH1A1BPTFP2RX7SMN1; SMN2TSHR
SCHEMBL28056616 0.70 ALDH1A1 (0.46) ALDH1A1BPTFLMNAP2RX7SMN1; SMN2
SCHEMBL3454290 0.70 ALDH1A1 (0.46) ALDH1A1BPTFGRIN2DGRIN3BGRIN1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1131677-B1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY DU PONT (US) 2005-08-03 EP claimed
US-20040023152-A1 Photoresists, polymers and processes for microlithography DUPONT ELECTRONICS, INC. 2004-02-05 US claimed
US-6593058-B1 Fluorine-containing copolymer contains sufficient functionality to render the photoresist developable so as to produce a relief image, following imagewise exposure to ultraviolet radiation E. I. DU PONT DE NEMOURS AND COMPANY 2003-07-15 US claimed
EP-1131677-A1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DUPONT DE NEMOURS AND COMPANY (US) 2001-09-12 EP claimed
WO-2000017712-A1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2000-03-30 WO claimed
US-7276323-B2 Photoresists, polymers and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-10-02 US disclosed
US-7166416-B2 Protecting groups in polymers, photoresists and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2007-01-23 US disclosed
US-20050191579-A1 Protecting groups in polymers, photoresists and processes for microlithography FEIRING ANDREW E (US) 2005-09-01 US disclosed
EP-1131677-B1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY DU PONT (US) 2005-08-03 EP disclosed
US-6899995-B2 Protecting groups in polymers, photoresists and processes for microlithography E.I. DU PONT DE NEMOURS AND COMPANY (US) 2005-05-31 US disclosed
US-6849377-B2 Photoresists, polymers and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY (US) 2005-02-01 US disclosed
US-20040023150-A1 Photoresists, polymers and processes for microlithography E. I. DU PONT DE NEMOURS AND COMPANY 2004-02-05 US disclosed
US-20040023152-A1 Photoresists, polymers and processes for microlithography DUPONT ELECTRONICS, INC. 2004-02-05 US disclosed
US-20040023157-A1 Protecting groups in polymers, photoresists and processes for microlithography E.I. DU PONT DE NEMOURS AND COMPANY 2004-02-05 US disclosed
EP-1340125-A2 PROTECTING GROUPS IN POLYMERS, PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2003-09-03 EP disclosed
US-6593058-B1 Fluorine-containing copolymer contains sufficient functionality to render the photoresist developable so as to produce a relief image, following imagewise exposure to ultraviolet radiation E. I. DU PONT DE NEMOURS AND COMPANY 2003-07-15 US disclosed
EP-1246013-A2 Photoresists, polymers and processes for microlithography E.I. DU PONT DE NEMOURS AND COMPANY (US) 2002-10-02 EP disclosed
WO-2002044845-A2 PROTECTING GROUPS IN POLYMERS, PHOTORESISTS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2002-06-06 WO disclosed
EP-1131677-A1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DUPONT DE NEMOURS AND COMPANY (US) 2001-09-12 EP disclosed
WO-2000017712-A1 PHOTORESISTS, POLYMERS AND PROCESSES FOR MICROLITHOGRAPHY E.I. DU PONT DE NEMOURS AND COMPANY (US) 2000-03-30 WO disclosed