SCHEMBL5407041

SCHEMBL5407041

O=S(=O)(O[I+](c1ccccc1)c1ccccc1)c1ccccc1F

nearest known ligand 0.43

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.43
MEN1 O00255 1/20 0.43
NPC1 O15118 1/20 0.43
RAB9A P51151 1/20 0.43
SENP8 Q96LD8 1/20 0.43
SENP7 Q9BQF6 1/20 0.43
SENP6 Q9GZR1 1/20 0.43
KAT6A Q92794 2/20 0.37
KCNA5 P22460 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.36
NFE2L2 Q16236 4/20 0.34
AKR1B1 P15121 1/20 0.34
HTR6 P50406 1/20 0.34
ALDH1A1 P00352 1/20 0.33
POLB P06746 1/20 0.33
PKM P14618 1/20 0.33
HSD11B1 P28845 1/20 0.33
GBA1 P04062 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5408484 0.87 HCRTR2 (0.38) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL2966142 0.84 HSD11B1 (0.41) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL548575 0.83 KMT2A (0.38) KMT2ANPC1RAB9AAKR1B1ALDH1A1
SCHEMBL5404365 0.83 CNR2 (0.39) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL5422314 0.83 KAT6A (0.38) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL5411397 0.81 KAT6A (0.40) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL5416235 0.80 NPC1 (0.38) KMT2AMEN1NPC1RAB9ASENP8
SCHEMBL455244 0.78 MEN1 (0.45) KMT2AMEN1RAB9AKAT6AALDH1A1
SCHEMBL503664 0.76 CA1 (0.38)
SCHEMBL2516869 0.76 CA1 (0.49) KMT2AMEN1NFE2L2AKR1B1HTR6

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
EP-1406123-A1 RESIST COMPOSITIONS Wako Pure Chemical Industries, Ltd. (JP) 2004-04-07 EP disclosed