SCHEMBL5412943

SCHEMBL5412943

COc1cccc([SiH2]CCCCC(CCCC[SiH2]c2cccc(OC)c2OC)(CCCC[SiH2]c2cccc(OC)c2OC)O[SiH3])c1OC

nearest known ligand 0.40

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 2/20 0.40
NFE2L2 Q16236 3/20 0.35
CNR1 P21554 1/20 0.34
CNR2 P34972 1/20 0.34
HPGD P15428 2/20 0.32
MEN1 O00255 2/20 0.31
KMT2A Q03164 2/20 0.31
KDM4E B2RXH2 2/20 0.31
MAPT P10636 2/20 0.31
ALDH1A1 P00352 2/20 0.31
CYP2D6 P10635 2/20 0.31
HSD17B10 Q99714 1/20 0.31
CYP1A2 P05177 1/20 0.31
MAPK1 P28482 3/20 0.31
LMNA P02545 2/20 0.31
NPC1 O15118 1/20 0.31
RAB9A P51151 1/20 0.31
ALOX5 P09917 1/20 0.31
PTGS2 P35354 1/20 0.31
TSHR P16473 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5413468 0.99 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5415262 0.99 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5417647 0.99 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5420256 0.93 SMN1; SMN2 (0.38) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5412598 0.89 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5417644 0.88 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL703492 0.88 SMN1; SMN2 (0.50) SMN1; SMN2NFE2L2HPGDMEN1KMT2A
SCHEMBL5404758 0.87 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5417109 0.87 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2HPGD
SCHEMBL5419951 0.87 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2CNR1CNR2HPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed