SCHEMBL5420256

SCHEMBL5420256

COc1cccc([SiH2]CCC(CC[SiH2]c2cccc(OC)c2OC)(CC[SiH2]c2cccc(OC)c2OC)O[SiH3])c1OC

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.38
NFE2L2 Q16236 6/20 0.35
CNR1 P21554 1/20 0.33
CNR2 P34972 1/20 0.33
KDM4E B2RXH2 2/20 0.32
MAPT P10636 1/20 0.32
HSD17B10 Q99714 1/20 0.32
MAPK1 P28482 2/20 0.32
POLB P06746 2/20 0.31
TSHR P16473 2/20 0.31
ABCB1 P08183 1/20 0.31
ABCG2 Q9UNQ0 1/20 0.31
CA12 O43570 1/20 0.31
CA1 P00915 1/20 0.31
CA2 P00918 1/20 0.31
CA14 Q9ULX7 1/20 0.31
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
CRHBP P24387 1/20 0.31
CRHR2 Q13324 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412943 0.93 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5415262 0.92 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5417647 0.92 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5413468 0.92 SMN1; SMN2 (0.39) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5417339 0.85 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2KDM4EMAPTHSD17B10
SCHEMBL5410147 0.85 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2KDM4EMAPK1POLB
SCHEMBL5404842 0.84 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2KDM4EMAPTHSD17B10
SCHEMBL5412598 0.84 SMN1; SMN2 (0.40) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5417644 0.84 SMN1; SMN2 (0.42) SMN1; SMN2NFE2L2CNR1CNR2KDM4E
SCHEMBL5419595 0.83 SMN1; SMN2 (0.41) SMN1; SMN2NFE2L2CNR1CNR2KDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed