SCHEMBL5412972

SCHEMBL5412972

CO[SiH](OC)C(C)C([SiH3])(C(C)[SiH](OC)OC)C(C)[SiH](OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL302436 0.73 SMN1; SMN2 (0.31)
SCHEMBL5415646 0.73
SCHEMBL5420189 0.72
SCHEMBL819426 0.69
SCHEMBL301473 0.65 ALDH1A1 (0.32)
SCHEMBL15541471 0.63
SCHEMBL69710 0.63
SCHEMBL2785526 0.62
SCHEMBL5865673 0.60
SCHEMBL8852226 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed