SCHEMBL5420189

SCHEMBL5420189

CO[SiH](OC)C(C)C(O[SiH3])(C(C)[SiH](OC)OC)C(C)[SiH](OC)OC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5412972 0.72
SCHEMBL5415646 0.69
SCHEMBL302436 0.69 SMN1; SMN2 (0.31)
SCHEMBL819426 0.65
SCHEMBL612818 0.64
SCHEMBL5413079 0.64
SCHEMBL301473 0.62 ALDH1A1 (0.32)
SCHEMBL69710 0.60
SCHEMBL15541471 0.60
SCHEMBL3676051 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7205338-B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-04-17 US disclosed
US-20040180222-A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device SHIN-ETSU CHEMICAL CO., LTD. 2004-09-16 US disclosed