SCHEMBL5437125

SCHEMBL5437125

C=C(C)C(=O)OC12CC3CC(CC(C3)C1)C2.CC(C)Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
KMT2A Q03164 2/20 0.43
NPSR1 Q6W5P4 1/20 0.43
SMN1; SMN2 Q16637 4/20 0.39
NPC1 O15118 3/20 0.39
RAB9A P51151 3/20 0.39
L3MBTL1 Q9Y468 2/20 0.36
MEN1 O00255 1/20 0.36
ALDH1A1 P00352 1/20 0.36
POLB P06746 1/20 0.36
MIF P14174 1/20 0.35
HDAC6 Q9UBN7 4/20 0.35
HDAC1 Q13547 3/20 0.35
HDAC3 O15379 2/20 0.35
HDAC2 Q92769 2/20 0.35
HDAC8 Q9BY41 2/20 0.35
HDAC4 P56524 1/20 0.35
HDAC10 Q969S8 1/20 0.35
HDAC5 Q9UQL6 1/20 0.35
ESR1 P03372 3/20 0.34
CYP19A1 P11511 2/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5442457 0.89 KMT2A (0.38) KMT2ANPSR1SMN1; SMN2NPC1RAB9A
SCHEMBL5440495 0.87 KMT2A (0.41) KMT2ANPSR1SMN1; SMN2NPC1RAB9A
SCHEMBL5446054 0.87 KMT2A (0.37) KMT2ANPSR1HDAC6HDAC1HDAC3
SCHEMBL5443938 0.87 CYP17A1 (0.36) KMT2ANPSR1SMN1; SMN2NPC1RAB9A
SCHEMBL5443982 0.86 MAPT (0.39) KMT2ANPSR1RAB9AMEN1ALDH1A1
SCHEMBL5442500 0.85 GABBR2 (0.36) KMT2ARAB9AMEN1HDAC6HDAC1
SCHEMBL5433067 0.85 ESR1 (0.35) KMT2ANPSR1MEN1HDAC6HDAC1
SCHEMBL5435131 0.85 ESR1 (0.38) KMT2ANPSR1ALDH1A1ESR1CYP19A1
SCHEMBL6315692 0.82 CYP1A2 (0.36) KMT2ANPSR1SMN1; SMN2NPC1RAB9A
SCHEMBL5446186 0.82 SMN1; SMN2 (0.39) KMT2ANPSR1SMN1; SMN2NPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 3 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed