SCHEMBL5446186

SCHEMBL5446186

C=C(C)C(=O)OC1C2CC3CC(C2)CC1C3.CC(C)Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 4/20 0.39
NPC1 O15118 3/20 0.39
RAB9A P51151 3/20 0.39
POLB P06746 2/20 0.36
KMT2A Q03164 2/20 0.36
MEN1 O00255 1/20 0.36
ALDH1A1 P00352 1/20 0.36
L3MBTL1 Q9Y468 1/20 0.36
ESR1 P03372 8/20 0.36
MIF P14174 1/20 0.35
CA12 O43570 1/20 0.34
AKR1B10 O60218 1/20 0.34
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
AKR1B1 P15121 1/20 0.34
CA7 P43166 1/20 0.34
CA9 Q16790 1/20 0.34
CA14 Q9ULX7 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
GAA P10253 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5441675 0.89 ESR1 (0.38) SMN1; SMN2NPC1RAB9APOLBKMT2A
SCHEMBL5454866 0.87 ESR1 (0.37) SMN1; SMN2NPC1RAB9APOLBESR1
SCHEMBL5439241 0.87 CA12 (0.36) SMN1; SMN2NPC1RAB9APOLBALDH1A1
SCHEMBL5453756 0.85 MAPT (0.39) RAB9APOLBALDH1A1ESR1CA12
SCHEMBL3840650 0.85 ESR1 (0.37) RAB9AKMT2AMEN1ESR1CA12
SCHEMBL5446382 0.85 ESR1 (0.36) ESR1CA12AKR1B10CA1CA2
SCHEMBL5436294 0.85 ESR1 (0.40) POLBALDH1A1ESR1CA12AKR1B10
SCHEMBL5436790 0.82 CYP1A2 (0.36) SMN1; SMN2NPC1RAB9AKMT2AMEN1
SCHEMBL5437125 0.82 KMT2A (0.43) SMN1; SMN2NPC1RAB9APOLBKMT2A
SCHEMBL3841428 0.82 ESR1 (0.36) POLBESR1CA12AKR1B10CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed