SCHEMBL5452212

SCHEMBL5452212

C=CC(=O)OC(C)(C)C.CC(=CC=Cc1ccc(C)cc1)c1ccc(O)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.44
MAOA P21397 2/20 0.44
MAOB P27338 2/20 0.44
RAB9A P51151 2/20 0.44
POLB P06746 1/20 0.44
MMP1 P03956 1/20 0.36
MMP2 P08253 1/20 0.36
MMP9 P14780 1/20 0.36
CA12 O43570 3/20 0.36
CA1 P00915 3/20 0.36
CA2 P00918 3/20 0.36
CA7 P43166 3/20 0.36
CA9 Q16790 3/20 0.36
CA14 Q9ULX7 3/20 0.36
MIF P14174 1/20 0.36
ESR1 P03372 1/20 0.35
ESR2 Q92731 1/20 0.35
TYR P14679 1/20 0.35
SLC5A1 P13866 1/20 0.34
SLC5A2 P31639 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5435092 0.90 ESRRG (0.41) MAPTRAB9ACA12CA1CA2
SCHEMBL2708904 0.90 KMT2A (0.41) MAPTMAOAMAOBRAB9ACA12
SCHEMBL2708835 0.90 CYP3A4 (0.41) MAPTMAOAMAOBRAB9ACA12
SCHEMBL7132626 0.89 MAOB (0.41) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5444184 0.88 MAOB (0.37) MAPTMAOAMAOBRAB9ACA12
SCHEMBL5438832 0.88 ESRRG (0.39) MAPTRAB9APOLBCA12CA1
SCHEMBL5440924 0.88 MAPT (0.46) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5453653 0.86 MAPT (0.44) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5442374 0.86 THRB (0.43) MAOBCA12CA1CA2CA7
SCHEMBL1506719 0.78 APP (0.43) MAPTMAOAMAOBRAB9ACA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed