SCHEMBL5453653

SCHEMBL5453653

C=C(C)C(=O)OC(C)(C)C.CC(=CC=Cc1ccc(C)cc1)c1ccc(O)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 5/20 0.44
MAOA P21397 2/20 0.44
MAOB P27338 2/20 0.44
RAB9A P51151 2/20 0.44
POLB P06746 1/20 0.44
MMP1 P03956 1/20 0.36
MMP2 P08253 1/20 0.36
MMP9 P14780 1/20 0.36
MIF P14174 1/20 0.36
ESR1 P03372 1/20 0.35
ESR2 Q92731 1/20 0.35
SLC5A1 P13866 1/20 0.34
SLC5A2 P31639 1/20 0.34
F3 P13726 2/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
ALDH1A1 P00352 2/20 0.34
P4HB P07237 1/20 0.34
CALM1 P0DP23 1/20 0.34
XDH P47989 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5444011 0.90 ESRRG (0.41) MAPTRAB9AMIFESR1ESR2
SCHEMBL2707109 0.90 KMT2A (0.41) MAPTMAOAMAOBRAB9APOLB
SCHEMBL2706218 0.90 CYP3A4 (0.41) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5438375 0.89 MAPT (0.44) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5443936 0.88 ESRRG (0.39) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5435028 0.88 MAOB (0.37) MAPTMAOAMAOBRAB9AMIF
SCHEMBL5452212 0.86 MAPT (0.44) MAPTMAOAMAOBRAB9APOLB
SCHEMBL5441440 0.86 ESR1 (0.38) MAOBPOLBMIFESR1ESR2
4-Vinylphenol SCHEMBL7137940 0.80 MIF (0.42) MAPTMAOAMAOBRAB9APOLB
SCHEMBL1506495 0.79 APP (0.42) MAPTMAOAMAOBRAB9AMMP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed