SCHEMBL545265

SCHEMBL545265

Cc1ccc(O)c(C(NCCNC(C(=O)O)c2cc(C)ccc2O)C(=O)O)c1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CSNK2A1 P68400 1/20 0.43
CHRM1 P11229 3/20 0.42
CHRM2 P08172 2/20 0.42
CHRM5 P08912 2/20 0.42
CHRM3 P20309 2/20 0.42
HRH1 P35367 2/20 0.42
ADRB2 P07550 1/20 0.42
CX3CR1 P49238 1/20 0.42
TMEM97 Q5BJF2 1/20 0.42
FFAR4 Q5NUL3 1/20 0.42
SIGMAR1 Q99720 1/20 0.42
GAA P10253 4/20 0.42
KMT2A Q03164 3/20 0.42
HTT P42858 3/20 0.42
NPSR1 Q6W5P4 2/20 0.42
HPGD P15428 2/20 0.42
MAPT P10636 4/20 0.40
LMNA P02545 2/20 0.40
ADRA1A P35348 2/20 0.40
ESR1 P03372 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19050623 0.92 CHRM2 (0.40) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL19050698 0.90 GAA (0.40) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL19050808 0.90 SMN1; SMN2 (0.40) CSNK2A1CHRM1CHRM2CHRM5CHRM3
Hydrochloric Acid SCHEMBL1775375 0.90 CHRM2 (0.39) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL19050694 0.89 CHRM2 (0.37) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL14015976 0.88 ALDH1A1 (0.40) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL19050643 0.88 ALDH1A1 (0.39) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL19050616 0.88 GAA (0.41) CSNK2A1CHRM1CHRM2CHRM5CHRM3
SCHEMBL29381607 0.87 TRPA1 (0.49) CSNK2A1CHRM1GAAKMT2AHTT
SCHEMBL2727885 0.87 TRPA1 (0.49) CSNK2A1CHRM1GAAKMT2AHTT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9340707-B2 Polishing composition to be used to polish semiconductor substrate having silicon through electrode structure, and polishing method using polishing composition FUJIMI INCORPORATED (JP) 2016-05-17 US claimed
US-10927262-B2 Method for producing oxidized carbon black aqueous dispersion, and method for producing oxidized carbon black aqueous dispersion for inkjet ink TOKAI CARBON CO., LTD. (JP) 2021-02-23 US disclosed
US-20200131096-A1 Biofertilizer Composition and Method of Manufacture SUSTAINABLE COMMUNITY DEV LLC (US) 2020-04-30 US disclosed
US-9980479-B2 Method of reducing nematode damage SYNGENTA CROP PROTECTION, LLC (US) 2018-05-29 US disclosed
US-9980479-B2 Method of reducing nematode damage SYNGENTA CROP PROTECTION, LLC (US) 2018-05-29 US disclosed
US-20180022926-A1 METHOD FOR PRODUCING OXIDIZED CARBON BLACK AQUEOUS DISPERSION, AND METHOD FOR PRODUCING OXIDIZED CARBON BLACK AQUEOUS DISPERSION FOR INKJET INK TOKAI CARBON CO., LTD. (JP) 2018-01-25 US disclosed
EP-3252111-A1 METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK, AND METHOD FOR MANUFACTURING AQUEOUS DISPERSION OF OXIDIZED CARBON BLACK FOR INKJET INK Tokai Carbon Co., Ltd. (JP) 2017-12-06 EP disclosed
US-9340707-B2 Polishing composition to be used to polish semiconductor substrate having silicon through electrode structure, and polishing method using polishing composition FUJIMI INCORPORATED (JP) 2016-05-17 US disclosed
EP-1715510-B2 SUBSTRATE CLEANING LIQUID FOR SEMICONDUCTOR DEVICE AND CLEANING METHOD MITSUBISHI CHEM CORP (JP) 2016-02-24 EP disclosed
US-20150111382-A1 POLISHING COMPOSITION TO BE USED TO POLISH SEMICONDUCTOR SUBSTRATE HAVING SILICON THROUGH ELECTRODE STRUCTURE, AND POLISHING METHOD USING POLISHING COMPOSITION FUJIMI INCORPORATED (JP) 2015-04-23 US disclosed
EP-1458923-A2 TREATMENT OF FABRIC ARTICLES THE PROCTER & GAMBLE COMPANY (US) 2004-09-22 EP disclosed
US-20040099290-A1 Method for cleaning a surface of a substrate MITSUBISHI CHEMICAL CORPORATION (JP) 2004-05-27 US disclosed
EP-1389496-A1 METHOD FOR CLEANING SURFACE OF SUBSTRATE MITSUBISHI CHEMICAL CORPORATION (JP) 2004-02-18 EP disclosed
EP-1342777-A1 Substrate cleaning liquid media and cleaning method MITSUBISHI CHEMICAL CORPORATION (JP) 2003-09-10 EP disclosed
US-20030144163-A1 Substrate surface cleaning liquid mediums and cleaning method MITSUBISHI CHEMICAL CORPORATION (JP) 2003-07-31 US disclosed
US-20030126690-A1 Treatment of fabric articles with hydrophobic chelants PROCTER & GAMBLE COMPANY, THE 2003-07-10 US disclosed
WO-2003054278-A2 TREATMENT OF FABRIC ARTICLES THE PROCTER & GAMBLE COMPANY (US) 2003-07-03 WO disclosed
US-6228179-B1 CONTACTING A SEMI-CONDUCTOR SUBSTRATE WITH A SURFACE TREATMENT COMPOSITION CONTAINING A COMPLEXING AGENT AS A METAL DEPOSITION PREVENTIVE IN A LIQUID MEDIUM, IN WHICH THE COMPLEXING AGENT IS AN ETHYLENEDIAMINEPHENOL DERIVATIVE MITSUBISHI CHEMICAL CORPORATION (JP) 2001-05-08 US disclosed
US-6143706-A FOR CLEANING SUBSTRATES SUCH AS SEMICONDUCTORS; PREVENTS SUBSTRATE SURFACE FROM BEING CONTAMINATED WITH METAL IMPURITIES FROM THE SURFACE TREATMENT COMPOSITION AND STABLY PROVIDES CLEAN SUBSTRATE SURFACE MITSUBISHI CHEMICAL CORPORATION (JP) 2000-11-07 US disclosed
EP-0858102-A2 Surface treatment composition and method for treating surface of substrate by using the same MITSUBISHI CHEMICAL CORPORATION (JP) 1998-08-12 EP disclosed