SCHEMBL5454866

SCHEMBL5454866

C=C(C)C(=O)OC1C2CC3CC(C2)CC1C3.CCCc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 11/20 0.37
CA12 O43570 2/20 0.36
CA1 P00915 2/20 0.36
CA7 P43166 2/20 0.36
CA9 Q16790 2/20 0.36
CA14 Q9ULX7 2/20 0.36
MET P08581 1/20 0.36
CA4 P22748 1/20 0.36
CA6 P23280 1/20 0.36
CA5A P35218 1/20 0.36
CA5B Q9Y2D0 1/20 0.36
POLB P06746 1/20 0.35
THRB P10828 1/20 0.35
ESR2 Q92731 1/20 0.33
CA2 P00918 1/20 0.33
NPC1 O15118 1/20 0.32
MAPT P10636 1/20 0.32
CASP3 P42574 1/20 0.32
RAB9A P51151 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5436294 0.94 ESR1 (0.40) ESR1CA12CA1CA7CA9
SCHEMBL5441675 0.92 ESR1 (0.38) ESR1CA12CA1CA7CA9
SCHEMBL5446186 0.87 SMN1; SMN2 (0.39) ESR1CA12CA1CA7CA9
SCHEMBL5453756 0.86 MAPT (0.39) ESR1CA12CA1CA7CA9
SCHEMBL3840650 0.86 ESR1 (0.37) ESR1CA12CA1CA7CA9
SCHEMBL5446382 0.84 ESR1 (0.36) ESR1CA12CA1CA7CA9
SCHEMBL5436790 0.83 CYP1A2 (0.36) ESR1CA12CA1CA7CA9
SCHEMBL5439241 0.83 CA12 (0.36) ESR1CA12CA1CA7CA9
SCHEMBL3842870 0.82 STAT3 (0.37) ESR1CA12CA1CA7CA9
SCHEMBL5446054 0.82 KMT2A (0.37) ESR1CA12CA1CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed