SCHEMBL5453756

SCHEMBL5453756

C=C(C)C(=O)OC1C2CC3CC(C2)CC1C3.Cc1ccc(C=CC=Cc2ccc(O)cc2)cc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
MAPT P10636 2/20 0.39
POLB P06746 1/20 0.39
MAOA P21397 1/20 0.39
MAOB P27338 1/20 0.39
RAB9A P51151 1/20 0.39
ESR1 P03372 9/20 0.38
MMP1 P03956 1/20 0.36
MMP2 P08253 1/20 0.36
MMP9 P14780 1/20 0.36
APP P05067 1/20 0.36
STAT3 P40763 1/20 0.35
SLC5A1 P13866 1/20 0.34
SLC5A2 P31639 1/20 0.34
CA12 O43570 3/20 0.33
CA1 P00915 3/20 0.33
CA2 P00918 3/20 0.33
CA7 P43166 3/20 0.33
CA9 Q16790 3/20 0.33
CA14 Q9ULX7 3/20 0.33
AKR1B10 O60218 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3840650 0.91 ESR1 (0.37) MAPTMAOAMAOBRAB9AESR1
SCHEMBL5443923 0.90 MMP1 (0.37) MAOAMAOBESR1MMP1MMP2
SCHEMBL5439241 0.88 CA12 (0.36) MAPTPOLBRAB9AESR1APP
SCHEMBL5436790 0.88 CYP1A2 (0.36) MAPTRAB9AESR1APPSTAT3
SCHEMBL5441675 0.88 ESR1 (0.38) MAPTPOLBRAB9AESR1APP
SCHEMBL5454866 0.86 ESR1 (0.37) MAPTPOLBRAB9AESR1CA12
SCHEMBL3842870 0.86 STAT3 (0.37) MAPTRAB9AESR1APPSTAT3
SCHEMBL5446186 0.85 SMN1; SMN2 (0.39) MAPTPOLBRAB9AESR1STAT3
4-Vinylphenol SCHEMBL3842785 0.84 ESR1 (0.36) MAPTESR1CA12CA1CA2
SCHEMBL5446382 0.84 ESR1 (0.36) ESR1STAT3CA12CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7312014-B2 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2007-12-25 US disclosed
US-6949329-B2 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2005-09-27 US disclosed
US-20040170918-A1 Poly(p-hydroxystyrene/styrene/alkyl acrylate) terpolymer derivative and acid generator comprising triphenylsulfonium benzenesulfonate derivative; forming positive pattern using transcription technology in high vacuum with irradiated energy such as electron beam, extreme ultraviolet ray and X-ray WAKO PURE CHEMICAL INDUSTRIES LTD. (JP) 2004-09-02 US disclosed
US-20030017425-A1 Pattern formation method MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (JP) 2003-01-23 US disclosed