Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 3/20 | 0.40 |
| ▸ | CASR | P41180 | 1/20 | 0.40 |
| ▸ | MEN1 | O00255 | 1/20 | 0.39 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.39 |
| ▸ | HPGD | P15428 | 2/20 | 0.37 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.37 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | LCK | P06239 | 1/20 | 0.36 |
| ▸ | TXK | P42681 | 1/20 | 0.36 |
| ▸ | SYK | P43405 | 1/20 | 0.36 |
| ▸ | ITK | Q08881 | 1/20 | 0.36 |
| ▸ | ESR1 | P03372 | 2/20 | 0.36 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.36 |
| ▸ | LMNA | P02545 | 1/20 | 0.36 |
| ▸ | TYR | P14679 | 1/20 | 0.36 |
| ▸ | AR | P10275 | 1/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | SLC6A2 | P23975 | 1/20 | 0.36 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL547580 | 0.92 | PTPN1 (0.43) | PTPN1CASRMEN1KMT2AHPGD | |
| SCHEMBL548731 | 0.91 | PTPN1 (0.50) | PTPN1CASRTDP1CYP3A4SLC6A2 | |
| SCHEMBL13797770 | 0.89 | CYP2A6 (0.56) | PTPN1CASRHPGDHSD17B10ALDH1A1 | |
| SCHEMBL12601245 | 0.89 | CYP1A2 (0.48) | HPGDHSD17B10ALDH1A1ALOX15TDP1 | |
| SCHEMBL2643225 | 0.87 | CYP2A6 (0.46) | CASRMEN1KMT2AALDH1A1LMNA | |
| SCHEMBL18905340 | 0.87 | LCK (0.35) | PTPN1CASRMEN1KMT2ALCK | |
| SCHEMBL9174482 | 0.85 | ALDH1A1 (0.47) | PTPN1CASRMEN1KMT2AALDH1A1 | |
| SCHEMBL9420901 | 0.85 | CYP1A2 (0.52) | TSHR | |
| SCHEMBL13976225 | 0.83 | PTPN1 (0.40) | PTPN1CASRMEN1KMT2AHPGD | |
| SCHEMBL9176385 | 0.83 | UGT2B7 (0.46) | CASRMEN1KMT2AALDH1A1CYP3A4 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 141 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-4814521-A | Process for producing 2,6-dihydroxynaphthalene and 2,6-diacetoxynaphthalene | KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1989-03-21 | — | — | US | claimed |
| JP-63104934-A | — | — | None | — | — | JP | disclosed |
| JP-62070339-A | — | — | None | — | — | JP | disclosed |
| JP-63022532-A | — | — | None | — | — | JP | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| EP-3062151-B1 | RESIST COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYPHENOLIC COMPOUND FOR USE IN THE COMPOSITION, AND ALCOHOLIC COMPOUND THAT CAN BE DERIVED THEREFROM | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-05-05 | — | — | EP | disclosed |
| EP-3141957-B1 | RESIST MATERIAL, RESIST COMPOSITION, AND RESIST PATTERN FORMATION METHOD | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-24 | — | — | EP | disclosed |
| EP-3279728-B1 | RESIST BASE MATERIAL, RESIST COMPOSITION, AND METHOD FOR FORMING RESIST PATTERN | MITSUBISHI GAS CHEMICAL CO (JP) | 2021-03-17 | — | — | EP | disclosed |
| EP-0308133-A1 | A method of oxidising secondary alkyl substituted naphthalenes | MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) | 1989-03-22 | — | — | EP | disclosed |
| US-4814521-A | Process for producing 2,6-dihydroxynaphthalene and 2,6-diacetoxynaphthalene | KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1989-03-21 | — | — | US | disclosed |
| US-4814521-A | Process for producing 2,6-dihydroxynaphthalene and 2,6-diacetoxynaphthalene | KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1989-03-21 | — | — | US | disclosed |
| US-4783557-A | Processes for preparing hydroxynaphthalenes | MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) | 1988-11-08 | — | — | US | disclosed |
| US-4746757-A | OZIDIZING AN ISOPROPYLNAPHTHALENE COMPOUND WITH A PEROXODISULFATE | KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1988-05-24 | — | — | US | disclosed |
| EP-0267761-A2 | Preparation process of 4,4'-dihydroxybiphenyl | KUREHA KAGAKU KOGYO KABUSHIKI KAISHA (JP) | 1988-05-18 | — | — | EP | disclosed |
| JP-S63104934-A | PRODUCTION OF 2,6-DIHYDROXYNAPHTHALENE | KUREHA CHEM IND CO LTD | 1988-05-10 | — | — | JP | disclosed |
| EP-0260147-A2 | Process for preparing hydroxynaphthalenes | MITSUI PETROCHEMICAL INDUSTRIES, LTD. (JP) | 1988-03-16 | — | — | EP | disclosed |
| JP-S6322532-A | PRODUCTION OF 2,6-NAPHTHALENEDIOL | KUREHA CHEM IND CO LTD | 1988-01-30 | — | — | JP | disclosed |
| JP-S6270339-A | PRODUCTION OF HIGH-PURITY 2,6-DIACETOXYNAPHTHALENE | KUREHA CHEM IND CO LTD | 1987-03-31 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | PTPN1 4528/4885CASR 3678/4885MEN1 1260/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | PTPN1 2886/4885CASR 2268/4885MEN1 1512/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | PTPN1 2886/4885CASR 2268/4885MEN1 1512/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.