Predicted protein targets (top 16)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PTPN1 | P18031 | 4/20 | 0.50 |
| ▸ | CASR | P41180 | 1/20 | 0.50 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.45 |
| ▸ | CYP2D6 | P10635 | 2/20 | 0.45 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.45 |
| ▸ | SLC6A4 | P31645 | 2/20 | 0.45 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.45 |
| ▸ | KCNH2 | Q12809 | 2/20 | 0.45 |
| ▸ | CYP2A6 | P11509 | 4/20 | 0.44 |
| ▸ | CYP1A2 | P05177 | 4/20 | 0.44 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | UGT2B7 | P16662 | 1/20 | 0.42 |
| ▸ | CA1 | P00915 | 1/20 | 0.40 |
| ▸ | CA2 | P00918 | 1/20 | 0.40 |
| ▸ | CES2 | O00748 | 1/20 | 0.40 |
| ▸ | CES1 | P23141 | 1/20 | 0.40 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL547724 | 0.91 | PTPN1 (0.40) | PTPN1CASRCYP3A4SLC6A2SLC6A4 | |
| SCHEMBL547580 | 0.88 | PTPN1 (0.43) | PTPN1CASRCYP3A4SLC6A2SLC6A4 | |
| SCHEMBL7132144 | 0.86 | CASR (0.58) | PTPN1CASRCYP3A4CYP2D6SLC6A2 | |
| SCHEMBL4490328 | 0.84 | ESR1 (0.57) | PTPN1CASRCA1CA2 | |
| SCHEMBL27508894 | 0.83 | CASR (0.51) | PTPN1CASRCYP3A4CYP2D6SLC6A2 | |
| SCHEMBL28588561 | 0.83 | CASR (0.47) | PTPN1CASRCYP3A4CYP2D6SLC6A2 | |
| SCHEMBL13704988 | 0.82 | HPRT1 (0.52) | CYP3A4CYP2A6CYP1A2TDP1 | |
| SCHEMBL599567 | 0.81 | PTPN1 (0.48) | PTPN1CASRCYP3A4CYP2D6SLC6A2 | |
| SCHEMBL30222062 | 0.81 | PTPN1 (0.48) | PTPN1CASRCYP3A4CYP2D6SLC6A2 | |
| SCHEMBL28297057 | 0.81 | PTPN1 (0.48) | PTPN1CASRCYP3A4CYP2D6SLC6A2 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 162 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| JP-61293936-A | — | — | None | — | — | JP | disclosed |
| EP-4734932-A1 | ORGANIC COMPOUNDS AND THEIR USE FOR GENERATING A FRAGRANT ALCOHOL | Givaudan SA (CH) | 2026-05-06 | — | — | EP | disclosed |
| WO-2025003204-A1 | ORGANIC COMPOUNDS AND THEIR USE FOR GENERATING A FRAGRANT ALCOHOL | GIVAUDAN SA (CH) | 2025-01-02 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230280655-A1 | COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-20230280655-A1 | COMPOSITION FOR FORMING ORGANIC FILM, PATTERNING PROCESS, AND COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-07 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| WO-2022094420-A1 | SELECTIVE TRANSITION METAL CATALYZED DEUTERIUM INCORPORATION INTO ALKYNE AND ALKENE FUNCTIONALITIES | MARQUETTE UNIVERSITY (US) | 2022-05-05 | — | — | WO | disclosed |
| US-20220112233-A1 | METHOD FOR PRODUCING PEPTIDE COMPOUND, PROTECTIVE GROUP-FORMING REAGENT, AND CONDENSED POLYCYCLIC AROMATIC HYDROCARBON COMPOUND | FUJIFILM CORPORATION (JP) | 2022-04-14 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| US-5858571-A | TREATING A PULVERIZED HYDROGEN ABSORBING ALLOY WITH A SOLUTION COMPRISING A CONJUGATED UNSATURATED COMPOUND | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-01-12 | — | — | US | disclosed |
| EP-0872903-A1 | Method for making hydrogen storage alloy powder and electrode comprising the alloy powder | Shin-Etsu Chemical Co., Ltd. (JP) | 1998-10-21 | — | — | EP | disclosed |
| EP-0796835-A1 | Process for the oxidation of isoalkyl-aromatic hydrocarbons and catalyst for carrying out this process | Rütgers Kureha Solvents GmbH (DE) | 1997-09-24 | — | — | EP | disclosed |
| CN-1006386-B | PROCESS FOR PRODUCTION OF VINYL CHLORIDE POLYMER | SHINETSU CHEM IND CO (JP) | 1990-01-10 | — | — | CN | disclosed |
| EP-0172427-B1 | PROCESS FOR PRODUCTION OF VINYL CHLORIDE POLYMER | Shin-Etsu Chemical Co., Ltd. (JP) | 1989-07-05 | — | — | EP | disclosed |
| US-4758639-A | Process for production of vinyl polymer | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1988-07-19 | — | — | US | disclosed |
| US-4757124-A | Suspension or emulsion polymerizing vinyl chloride monomer or mixture of vinyl chloride with vinyl monomer copolymerizable therewith in reactor with walls coated with antiscaling compound containing dye or pigments | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1988-07-12 | — | — | US | disclosed |
| CN-85107531-A | Process for producing vinyl chloride polymer | — | 1987-01-21 | — | — | CN | disclosed |
| JP-S61293936-A | LIQUID-PHASE DEHYDRATION OF ALCOHOL HAVING AROMATIC SIDE-CHAIN AT ALPHA-SITE | KUREHA CHEM IND CO LTD | 1986-12-24 | — | — | JP | disclosed |
| EP-0172427-A2 | Process for production of vinyl chloride polymer | Shin-Etsu Chemical Co., Ltd. (JP) | 1986-02-26 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | PTPN1 4528/4885CASR 3678/4885CYP3A4 3096/4885 |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | PTPN1 2886/4885CASR 2268/4885CYP3A4 1754/4885 |
| US-20220112233-A1 | METHOD FOR PRODUCING PEPTIDE COMPOUND, PROTECTIVE GROUP-FORMING REAGENT, AND CONDENSED POLYCYCLIC AROMATIC HYDROCARBON COMPOUND | C1R, QRFPR, MCHR1 | PTPN1 3804/4885CASR 1396/4885CYP3A4 3139/4885 |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | C9, C5, C1R | PTPN1 2886/4885CASR 2268/4885CYP3A4 1754/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.