Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | NAAA | Q02083 | 1/20 | 0.47 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.47 |
| ▸ | ATM | Q13315 | 1/20 | 0.44 |
| ▸ | DGKA | P23743 | 1/20 | 0.42 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.42 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.42 |
| ▸ | MAPT | P10636 | 1/20 | 0.42 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.42 |
| ▸ | TSHR | P16473 | 2/20 | 0.41 |
| ▸ | HPGD | P15428 | 1/20 | 0.41 |
| ▸ | NPC1 | O15118 | 1/20 | 0.41 |
| ▸ | RAB9A | P51151 | 1/20 | 0.41 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.41 |
| ▸ | RAD52 | P43351 | 1/20 | 0.41 |
| ▸ | FAAH | O00519 | 1/20 | 0.40 |
| ▸ | HCAR2 | Q8TDS4 | 1/20 | 0.39 |
| ▸ | HTR2C | P28335 | 1/20 | 0.39 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.38 |
| ▸ | MEN1 | O00255 | 1/20 | 0.37 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.37 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28244712 | 0.88 | NAAA (0.36) | NAAAALDH1A1DGKANPSR1L3MBTL1 | |
| SCHEMBL11571805 | 0.85 | NAAA (0.47) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL9486790 | 0.83 | NAAA (0.46) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL19434159 | 0.83 | NAAA (0.46) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL1879588 | 0.82 | NAAA (0.48) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL1866046 | 0.82 | ALDH1A1 (0.52) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL95383 | 0.82 | ALDH1A1 (0.52) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL28117429 | 0.82 | ALDH1A1 (0.52) | NAAAALDH1A1ATMDGKANPSR1 | |
| SCHEMBL16217592 | 0.81 | NAAA (0.32) | NAAAALDH1A1DGKANPSR1L3MBTL1 | |
| SCHEMBL9396269 | 0.80 | NAAA (0.43) | NAAAALDH1A1ATMDGKANPSR1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 317 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-122094988-A | Iodine-containing (meth) acrylate compound, iodine-containing (meth) acrylate (co) polymer, composition for lithography, resist composition, composition for underlayer film formation, and method for producing iodine-containing (meth) acrylate compound | — | 2026-05-26 | — | — | CN | disclosed |
| CN-122043858-A | EUV patterned resist formation method | 亚历克斯·P·G·罗宾逊 | 2026-05-15 | — | — | CN | disclosed |
| CN-120136704-A | Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound | 三菱瓦斯化学株式会社 | 2025-06-13 | — | — | CN | disclosed |
| CN-120136703-A | Compound, polymer, composition for film formation, pattern formation method, method for forming insulating film, and method for producing compound | 三菱瓦斯化学株式会社 | 2025-06-13 | — | — | CN | disclosed |
| WO-2025084341-A1 | IODINE-CONTAINING (METH)ACRYLATE COMPOUND, IODINE-CONTAINING (METH)ACRYLATE (CO)POLYMER, LITHOGRAPHY COMPOSITION, RESIST COMPOSITION, UNDERLAYER FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING IODINE-CONTAINING (METH)ACRYLATE COMPOUND | 三菱瓦斯化学株式会社 | 2025-04-24 | — | — | WO | disclosed |
| WO-2025084342-A1 | IODINE-CONTAINING (METH)ACRYLATE COMPOUND, IODINE-CONTAINING (METH)ACRYLATE (CO)POLYMER, LITHOGRAPHY COMPOSITION, RESIST COMPOSITION, UNDERLAYER-FILM-FORMING COMPOSITION, AND METHOD FOR PRODUCING IODINE-CONTAINING (METH)ACRYLATE COMPOUND | 三菱瓦斯化学株式会社 | 2025-04-24 | — | — | WO | disclosed |
| WO-2025084340-A1 | IODINE-CONTAINING (METH)ACRYLATE COMPOUND, IODINE-CONTAINING (METH)ACRYLATE (CO)POLYMER, LITHOGRAPHY COMPOSITION, RESIST COMPOSITION, BOTTOM LAYER-FORMING COMPOSITION, AND METHOD FOR PRODUCING IODINE-CONTAINING (METH)ACRYLATE COMPOUND | 三菱瓦斯化学株式会社 | 2025-04-24 | — | — | WO | disclosed |
| WO-2025079631-A1 | COMPOSITION, RESIN COMPOSITION, COMPOSITION FOR FILM FORMATION, COMPOSITION FOR FORMING LITHOGRAPHIC FILM, AND COMPOSITION FOR FORMING RESIST FILM | 三菱瓦斯化学株式会社 | 2025-04-17 | — | — | WO | disclosed |
| WO-2025079648-A1 | COMPOUND, COMPOSITION, RESIN COMPOSITION, COMPOSITION FOR FORMING FILM, COMPOSITION FOR FORMING FILM FOR LITHOGRAPHY, AND COMPOSITION FOR FORMING RESIST FILM | 三菱瓦斯化学株式会社 | 2025-04-17 | — | — | WO | disclosed |
| CN-119451998-A | Composition, resin composition, composition for film formation, pattern formation method, and compound | 三菱瓦斯化学株式会社 | 2025-02-14 | — | — | CN | disclosed |
| US-20020058201-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-05-16 | — | — | US | disclosed |
| EP-1193558-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2002-04-03 | — | — | EP | disclosed |
| US-6337171-B1 | AS A RESIST APPLICABLE TO FAR ULTRAVIOLET RAYS SUCH AS A KRF EXCIMER LASER, CHARGED PARTICLE RAYS SUCH AS ELECTRON BEAMS, AND X-RAYS | JSR CORPORATION (JP) | 2002-01-08 | — | — | US | disclosed |
| US-20010041769-A1 | Polysiloxane, method of manufacturing same, silicon-containingalicyclic compouns, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-11-15 | — | — | US | disclosed |
| EP-1142928-A1 | Polysiloxane, method of manufacturing same, silicon-containing alicyclic compound, and radiation-sensitive resin compounds | JSR Corporation (JP) | 2001-10-10 | — | — | EP | disclosed |
| US-6280900-B1 | RADIATION SENSITIVE COMPOSITION WITH ALKALINE DEVELOPER SOLUBLE IN POLYMER COATED ON SUBSTRATE | JSR CORPORATION (JP) | 2001-08-28 | — | — | US | disclosed |
| US-20010006758-A1 | Negative radiation-sensitive resin composition | JSR CORPORATION (JP) | 2001-07-05 | — | — | US | disclosed |
| EP-1111465-A1 | Negative radiation-sensitive resin composition | JSR Corporation (JP) | 2001-06-27 | — | — | EP | disclosed |
| EP-1085379-A1 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1011029-A2 | Radiation-sensitive resin composition | JSR Corporation (JP) | 2000-06-21 | — | — | EP | disclosed |