Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPK1 | P28482 | 3/20 | 0.36 |
| ▸ | TSHR | P16473 | 1/20 | 0.36 |
| ▸ | GAA | P10253 | 1/20 | 0.36 |
| ▸ | FFAR4 | Q5NUL3 | 2/20 | 0.36 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | KAT6A | Q92794 | 2/20 | 0.34 |
| ▸ | MAPT | P10636 | 4/20 | 0.32 |
| ▸ | POLB | P06746 | 3/20 | 0.32 |
| ▸ | HPGD | P15428 | 3/20 | 0.32 |
| ▸ | MEN1 | O00255 | 2/20 | 0.32 |
| ▸ | NSD2 | O96028 | 2/20 | 0.32 |
| ▸ | THRB | P10828 | 2/20 | 0.32 |
| ▸ | RECQL | P46063 | 2/20 | 0.32 |
| ▸ | P2RY1 | P47900 | 2/20 | 0.32 |
| ▸ | KMT2A | Q03164 | 2/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.32 |
| ▸ | NPSR1 | Q6W5P4 | 2/20 | 0.32 |
| ▸ | TDP1 | Q9NUW8 | 2/20 | 0.32 |
| ▸ | L3MBTL1 | Q9Y468 | 2/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3189918 | 0.91 | TSHR (0.37) | MAPK1TSHRGAAALDH1A1KDM4E | |
| SCHEMBL3204756 | 0.87 | ALDH1A1 (0.35) | MAPK1TSHRGAAFFAR4ALDH1A1 | |
| SCHEMBL3190420 | 0.86 | GAA (0.35) | MAPK1TSHRGAAALDH1A1KAT6A | |
| SCHEMBL2954163 | 0.86 | ALDH1A1 (0.36) | MAPK1TSHRGAAALDH1A1KDM4E | |
| SCHEMBL3190654 | 0.85 | FFAR4 (0.47) | MAPK1TSHRGAAFFAR4KMT2A | |
| SCHEMBL3200961 | 0.85 | ALDH1A1 (0.35) | MAPK1TSHRGAAFFAR4ALDH1A1 | |
| SCHEMBL2537983 | 0.85 | HTR2A (0.38) | MAPK1TSHRGAAALDH1A1POLB | |
| SCHEMBL4654631 | 0.85 | ALDH1A1 (0.32) | MAPK1TSHRGAAFFAR4ALDH1A1 | |
| SCHEMBL6748648 | 0.81 | ALDH1A1 (0.32) | MAPK1GAAFFAR4ALDH1A1MAPT | |
| SCHEMBL2512390 | 0.81 | FFAR4 (0.36) | MAPK1FFAR4ALDH1A1KDM4EMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 188 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8206888-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2012-06-26 | — | — | US | claimed |
| US-20100028800-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR CORPORATION (JP) | 2010-02-04 | — | — | US | claimed |
| EP-1953593-A1 | RADIATION-SENSITIVE RESIN COMPOSITION | JSR Corporation (JP) | 2008-08-06 | — | — | EP | claimed |
| US-7060414-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2006-06-13 | — | — | US | claimed |
| US-20050158657-A1 | Radiation-sensitive resin composition | SUZUKI AKI (JP) | 2005-07-21 | — | — | US | claimed |
| US-6899989-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-05-31 | — | — | US | claimed |
| US-20020090569-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-07-11 | — | — | US | claimed |
| WO-2024014330-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| WO-2024014329-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2024-01-18 | — | — | WO | disclosed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230096312-A1 | RESIST COMPOSITION AND METHOD FOR USING RESIST COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-03-30 | — | — | US | disclosed |
| WO-2023008354-A1 | RESIST COMPOSITION AND RESIST FILM FORMING METHOD USING SAME | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| WO-2023008355-A1 | RESIST AUXILIARY FILM COMPOSITION, AND PATTERN FORMING METHOD USING SAID COMPOSITION | 三菱瓦斯化学株式会社 | 2023-02-02 | — | — | WO | disclosed |
| US-6899989-B2 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2005-05-31 | — | — | US | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |
| EP-1443362-A2 | Resist composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2004-08-04 | — | — | EP | disclosed |
| JP-2003043679-A | RADIATION SENSITIVE RESIN COMPOSITION | JSR CORP | 2003-02-13 | — | — | JP | disclosed |
| US-20020090569-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-07-11 | — | — | US | disclosed |
| US-20020090569-A1 | Radiation-sensitive resin composition | JSR CORPORATION (JP) | 2002-07-11 | — | — | US | disclosed |
| JP-2002156759-A | RADIATION SENSITIVE RESIN COMPOSITION | JSR CORP | 2002-05-31 | — | — | JP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | SLC39A11, CROCC, TERB1 | MAPK1 2304/4885TSHR 2912/4885GAA 2880/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.