⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL548205 | 0.97 | SHBG (0.40) | — | |
| SCHEMBL129697 | 0.88 | — | — | |
| SCHEMBL3311552 | 0.75 | SHBG (0.39) | — | |
| SCHEMBL14771627 | 0.73 | — | — | |
| SCHEMBL10437743 | 0.73 | SHBG (0.43) | — | |
| SCHEMBL24722747 | 0.73 | SHBG (0.38) | — | |
| SCHEMBL3313525 | 0.73 | SHBG (0.43) | — | |
| SCHEMBL548352 | 0.73 | — | — | |
| SCHEMBL6366987 | 0.73 | — | — | |
| SCHEMBL15619308 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 94 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2955575-B1 | RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND POLYPHENOL DERIVATIVE USED IN SAME | MITSUBISHI GAS CHEMICAL CO (JP) | 2020-07-29 | — | — | EP | claimed |
| US-9897913-B2 | Radiation-sensitive composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2018-02-20 | — | — | US | claimed |
| US-20150030980-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL CO (JP) | 2015-01-29 | — | — | US | claimed |
| US-11852970-B2 | Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-12-26 | — | — | US | disclosed |
| US-20230185191-A1 | COMPOUND, PRODUCTION METHOD THEREFOR, ACID GENERATOR, COMPOSITION, RESIST FILM, UNDERLAYER FILM, PATTERN FORMATION METHOD, AND OPTICAL COMPONENT | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-06-15 | — | — | US | disclosed |
| US-11572430-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2023-02-07 | — | — | US | disclosed |
| CN-115605458-A | Compound and method for producing same, acid generator, composition, resist film, underlayer film, pattern formation method, and optical article | 学校法人关西大学（JP） | 2023-01-13 | — | — | CN | disclosed |
| US-20220144738-A1 | COMPOUND, RESIN, COMPOSITION, RESIST PATTERN FORMATION METHOD, CIRCUIT PATTERN FORMATION METHOD, AND METHOD FOR PURIFYING RESIN | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-05-12 | — | — | US | disclosed |
| US-11256170-B2 | Compound, resist composition, and method for forming resist pattern using it | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-22 | — | — | US | disclosed |
| US-11243467-B2 | Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2022-02-08 | — | — | US | disclosed |
| CN-107949808-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and method for producing same | 三菱瓦斯化学株式会社 | 2021-10-22 | — | — | CN | disclosed |
| US-20110165516-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | ECHIGO MASATOSHI | 2011-07-07 | — | — | US | disclosed |
| US-7919223-B2 | Polyphenol compound synthesized by condensation between aromatic ketone or aldehyde and a phenol; acid-amplified, non-polymeric resist; highly sensitive to KrF excimer lasers, extreme ultraviolet rays, electron beams, X-rays; resist patterns with high resolution, high heat, etch resistance | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2011-04-05 | — | — | US | disclosed |
| US-20100047709-A1 | RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2010-02-25 | — | — | US | disclosed |
| EP-2080750-A1 | RADIATION-SENSITIVE COMPOSITION | Mitsubishi Gas Chemical Company, Inc. (JP) | 2009-07-22 | — | — | EP | disclosed |
| US-20080113294-A1 | Compound for Resist and Radiation-Sensitive Composition | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2008-05-15 | — | — | US | disclosed |
| EP-1830228-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2007-09-05 | — | — | EP | disclosed |
| US-20070059632-A1 | Method of manufacturing a semiconductor device | MITSUBISHI GAS CHEMICAL CO., INC. (JP) | 2007-03-15 | — | — | US | disclosed |
| EP-1666970-A1 | COMPOUND FOR RESIST AND RADIATION-SENSITIVE COMPOSITION | MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) | 2006-06-07 | — | — | EP | disclosed |
| US-20040191672-A1 | Resist composition | MITSUBISHI GAS CHEMICAL CO., LTD. (JP) | 2004-09-30 | — | — | US | disclosed |