Hydrochloric Acid

Hydrochloric Acid

SCHEMBL556790

CC[N+]1(C)CCCC1.[Cl-]

nearest known ligand 0.00

Full drug profile on Sugi Atlas →

Known targets — ChEMBL curated mechanism

ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA

The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL9198276 0.97 KDM4E (0.42)
SCHEMBL142703 0.97
SCHEMBL372419 0.93
SCHEMBL30395307 0.93
Fluoride SCHEMBL19181824 0.93
Bromide SCHEMBL384403 0.93
SCHEMBL7607070 0.93 KDM4E (0.44)
SCHEMBL2866854 0.93 KDM4E (0.44)
Fluoride Ion SCHEMBL1996850 0.93
Iodide SCHEMBL1681443 0.93

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-113383408-B Treatment liquid for semiconductor wafer containing onium salt 株式会社德山 2025-04-08 CN claimed
US-20150335547-A1 ORAL CARE COMPOSITION CONTAINING IONIC LIQUIDS COLGATE-PALMOLIVE COMPANY (US) 2015-11-26 US claimed
EP-2934469-A2 ORAL CARE COMPOSITION CONTAINING IONIC LIQUIDS Colgate-Palmolive Company (US) 2015-10-28 EP claimed
WO-2014098871-A2 ORAL CARE COMPOSITION CONTAINING IONIC LIQUIDS COLGATE-PALMOLIVE COMPANY (US) 2014-06-26 WO claimed
EP-0398358-B1 Aluminum electroplating method MITSUBISHI PETROCHEMICAL CO (JP) 1994-03-09 EP claimed
US-5041194-A Using low melting mixture of aluminum halide and onium halide of nitrogen-containing compound MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1991-08-20 US claimed
EP-0398358-A2 Aluminum electroplating method MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1990-11-22 EP claimed
JP-3134194-A None JP disclosed
US-12600909-B2 Etching solution composition RASA INDUSTRIES, LTD. (JP) 2026-04-14 US disclosed
EP-4622978-A1 PROCESS FOR THE PRODUCTION OF HYDRIDOSILANES Momentive Performance Materials GmbH (DE) 2025-10-01 EP disclosed
CN-113383408-B Treatment liquid for semiconductor wafer containing onium salt 株式会社德山 2025-04-08 CN disclosed
CN-114566723-B Electrolyte for rechargeable electrochemical cells EOS能源技术控股有限责任公司 2025-03-04 CN disclosed
WO-2025028268-A1 ETCHING LIQUID REGENERATION METHOD ラサ工業株式会社 2025-02-06 WO disclosed
US-20110150736-A1 IONIC COMPOUND, METHOD FOR PRODUCING THE SAME, AND ION-CONDUCTIVE MATERIAL COMPRISING THE SAME NIPPON SHOKUBAI CO., LTD. (JP) 2011-06-23 US disclosed
EP-2327707-A1 IONIC COMPOUND, PROCESS FOR PRODUCING SAME, AND ION-CONDUCTIVE MATERIAL COMPRISING SAME Nippon Shokubai Co., Ltd. (JP) 2011-06-01 EP disclosed
US-20090101514-A1 Electrodeposition Method for Metals KYOTO UNIVERSITY (JP) 2009-04-23 US disclosed
EP-0398358-B1 Aluminum electroplating method MITSUBISHI PETROCHEMICAL CO (JP) 1994-03-09 EP disclosed
US-5041194-A Using low melting mixture of aluminum halide and onium halide of nitrogen-containing compound MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1991-08-20 US disclosed
JP-H03134194-A LOW-MELTING POINT COMPOSITION AND ELECTRIC ALUMINUM PLATING METHOD MITSUBISHI PETROCHEM CO LTD 1991-06-07 JP disclosed
EP-0398358-A2 Aluminum electroplating method MITSUBISHI PETROCHEMICAL CO., LTD. (JP) 1990-11-22 EP disclosed